HAT2165H Renesas Electronics America, HAT2165H Datasheet - Page 7

• Manufacturer Part Number: HAT2165H
• Description: MOSFET N-CH 30V 55A LFPAK
• Manufacturer: Renesas Electronics America

Specifications of HAT2165H

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 55A
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5180pF @ 10V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: LFPAK
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Vgs(th) (max) @ Id: -

HAT2165H
Rev.6.00 Sep 20, 2005 page 5 of 7
Vin
15 V
100
80
60
40
20
0
Source to Drain Voltage
Reverse Drain Current vs.
Source to Drain Voltage
0.4
Avalanche Test Circuit
10 V
5 V
0.03
0.01
V
Monitor
0.3
0.1
50 Ω
DS
3
1
10 µ
Rg
0.8
0.5
D = 1
V
GS
= 0
1.2
Normalized Transient Thermal Impedance vs. Pulse Width
100 µ
Pulse Test
D. U. T
I
Monitor
V
AP
SD
L
1.6
(V)
2.0
1 m
V
DD
Pulse Width PW (s)
10 m
0
V
100
80
60
40
20
DD
0
25
P
θch - c(t) = γs (t) • θch - c
θch - c = 4.17°C/ W, Tc = 25°C
DM
Channel Temperature Tch (°C)
Maximum Avalanche Energy vs.
100 m
Channel Temperature Derating
E
AR
I
AP
=
50
Avalanche Waveform
1
2
PW
T
I
D
L • I
75
AP
1
2
•
I
V
duty < 0.1 %
Rg ≥ 50 Ω
Tc = 25°C
AP
D =
DD
100
V
= 30 A
= 15 V
DSS
PW
V
T
DSS
– V
10
125
DD
V
DS
V
(BR)DSS
150