BUZ80A Infineon Technologies, BUZ80A Datasheet
BUZ80A
Specifications of BUZ80A
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BUZ80A Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type V DS BUZ 80 A 800 V Maximum Ratings Parameter Continuous drain current °C C Pulsed drain current °C C Avalanche ...
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Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA ° Gate threshold voltage = DS, D ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance = MHz Output ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage = 6 ...
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Power dissipation tot C 110 tot Safe operating area parameter 0.01, ...
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Typ. output characteristics parameter µ ° 8 100W tot 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0 ...
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Drain-source on-resistance (on) j parameter (on 98% 5 typ -60 ...
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Avalanche energy parameter 3 62 340 mJ 280 E AS 240 200 160 120 ...
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Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 BUZ 80 A 09/96 ...