BSS131E6327 Infineon Technologies, BSS131E6327 Datasheet

MOSFET N-CH 240V .11A SOT-23

BSS131E6327

Manufacturer Part Number
BSS131E6327
Description
MOSFET N-CH 240V .11A SOT-23
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of BSS131E6327

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 Ohm @ 100mA, 10V
Drain To Source Voltage (vdss)
240V
Current - Continuous Drain (id) @ 25° C
110mA
Vgs(th) (max) @ Id
1.8V @ 56µA
Gate Charge (qg) @ Vgs
3.1nC @ 10V
Input Capacitance (ciss) @ Vds
77pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSS131
BSS131E6327XT
BSS131INTR
BSS131XTINTR
BSS131XTINTR
SP000011168

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSS131E6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 2.2
Type
SIPMOS
Feature
• N-Channel
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD class
(JESD22-A114-HBM)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
BSS131
®
Small-Signal-Transistor
Package
PG-SOT23
j
=25 °C, unless otherwise specified
Pb-free
Yes
Symbol Conditions
I
I
dv /dt
V
P
T
D
D,pulse
j
GS
tot
, T
stg
Tape and Reel Information
L6327: 3000 pcs/reel
T
T
T
I
di /dt =200 A/µs,
T
T
D
A
A
A
j,max
A
=0.1 A, V
page 1
=25 °C
=70 °C
=25 °C
=25 °C
=150 °C
DS
Product Summary
V
R
I
=192 V,
D
DS
DS(on),max
0 (<250V)
-55 ... 150
55/150/56
Value
0.11
0.09
0.36
Marking
SRs
±20
0.4
PG-SOT-23
6
240
14
0.1
BSS131
2009-08-18
Unit
A
kV/µs
V
W
°C
V
A

Related parts for BSS131E6327

BSS131E6327 Summary of contents

Page 1

Type ® SIPMOS Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant Pb-free Type Package BSS131 PG-SOT23 Yes Maximum ratings =25 °C, unless otherwise specified j Parameter Continuous ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - minimal footprint Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance Rev. 2.2 Symbol Conditions R thJA =25 °C, unless ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...

Page 4

Power dissipation P =f(T ) tot A 0.4 0.3 0.2 0 [° Safe operating area I =f =25 ° parameter limited ...

Page 5

Typ. output characteristics I =f =25 ° parameter 0 0.3 0.2 0 Typ. transfer characteristics I =f(V ); ...

Page 6

Drain-source on-state resistance =10 V DS(on -60 - [° Typ. capacitances C =f ...

Page 7

Typ. gate charge V =f =0.1 A pulsed GS gate D parameter 0 gate Rev. 2.2 14 Drain-source breakdown voltage V BR(DSS) 300 ...

Page 8

Package Outline: Footprint: Rev. 2.2 Packaging: page 8 BSS131 2009-08-18 ...

Page 9

... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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