BSS138N-E6327 Infineon Technologies, BSS138N-E6327 Datasheet

MOSFET N-CH 60V 230MA SOT-23

BSS138N-E6327

Manufacturer Part Number
BSS138N-E6327
Description
MOSFET N-CH 60V 230MA SOT-23
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of BSS138N-E6327

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 Ohm @ 230mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
230mA
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 10V
Input Capacitance (ciss) @ Vds
41pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSS138E6327
BSS138INTR
BSS138INTR
BSS138NE6327XT
BSS138NEINTR
BSS138NEXTINTR
BXX138NEXTINTR
SP000014560
Rev. 2.82
Features
• N-channel
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
Parameter
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD sensitivity
ESD sensitivity
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
SIPMOS
Type
BSS138N
BSS138N
®
Small-Signal-Transistor
Package
PG-SOT-23
PG-SOT-23
Tape and Reel
L6327: 3000
L6433: 10000
Symbol Conditions
I
I
dv /dt
V
P
T
D
D,pulse
j
GS
tot
, T
stg
Marking
SKs
SKs
T
T
T
I
di /dt =200 A/µs,
T
T
JESD22-A114 (HBM)
D
MIL-STD 883 (HBM)
page 1
A
A
A
j,max
A
=0.23 A, V
=25 °C
=70 °C
=25 °C
=25 °C
=150 °C
DS
Product Summary
V
R
I
D
=48 V,
DS
DS(on),max
Class 1 (<1999V)
Class 0 (<250V)
-55 ... 150
55/150/56
Value
0.23
0.18
0.92
0.36
±20
PG-SOT-23
6
60
3.5
0.23
BSS138N
Unit
A
kV/µs
V
W
°C
V
A
2009-02-11

Related parts for BSS138N-E6327

BSS138N-E6327 Summary of contents

Page 1

... A I =0. = /dt di /dt =200 A/µs, T =150 °C j,max V GS MIL-STD 883 (HBM) JESD22-A114 (HBM =25 °C tot stg page 1 BSS138N 60 V 3.5 Ω 0.23 A PG-SOT-23 Value Unit 0.23 A 0.18 0.92 6 kV/µs ±20 V Class 1 (<1999V) Class 0 (<250V) 0.36 W -55 ... 150 °C 55/150/56 ...

Page 2

... =250 µA (BR)DSS =26 µA GS(th = (off =25 ° = =150 ° = GSS =4 =0.03 A DS(on =4 =0. = =0. |>2 DS(on)max =0. page 2 BSS138N Values Unit min. typ. max 350 K 0.6 1.0 1 0.1 µ Ω - 3.3 4.0 - 3.5 6.0 - 2.2 3.5 , 0.1 0 2009-02-11 ...

Page 3

... MHz C rss t d( Ω I =0. d(off = =0. plateau =25 ° S,pulse =0. =25 ° = =0. /dt =100 A/µ page 3 BSS138N Values Unit min. typ. max 7.2 9.5 - 2.8 3.8 - 2.3 3 3.0 4 8.2 12.3 - 0.10 0. 0.3 0.4 - 1.0 1 0.92 - 0.83 1 9 2009-02-11 ...

Page 4

... Rev. 2.82 2 Drain current I =f 0.25 0.2 0.15 0.1 0. 120 160 0 [° Max. transient thermal impedance Z =f(t thJA p parameter µ 100 µ 100 100 10 [V] DS page 4 BSS138N ≥ 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 160 2009-02-11 ...

Page 5

... DS(on) parameter 4 3 3 Typ. forward transconductance g =f 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0. 0.00 [V] GS page 5 BSS138N ); T =25 ° 2 3 0.1 0.2 0.3 0.4 I [A] D =25 °C j 0.10 0.20 0.30 0.40 I [A] D 0.5 2009-02-11 ...

Page 6

... I 2 1.6 1.2 0.8 typ 0 100 140 -60 [° Forward characteristics of reverse diode =25° parameter Ciss -1 10 Coss -2 10 Crss - [V] DS page 6 BSS138N ); =26 µ %98 typ %2 - 100 140 T [° 150 °C, 98% 25 °C 25 °C, 98% 150 °C 0.4 0.8 1.2 1 [V] SD 2.4 2009-02-11 ...

Page 7

... Typ. gate charge V =f =0.23 A pulsed GS gate D parameter 0.2 0.4 Q gate Rev. 2.82 14 Drain-source breakdown voltage V =f(T BR(DSS -60 0.6 0.8 1 [nC] page 7 BSS138N ); I =250 µ - 100 140 T [°C] j 180 2009-02-11 ...

Page 8

... Package Outline: Footprint: Dimensions in mm Rev. 2.82 Packaging: page 8 BSS138N 2009-02-11 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.82 page 9 BSS138N 2009-02-11 ...

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