MOSFET N-CH 60V 230MA SOT-23

BSS138N-E6327

Manufacturer Part NumberBSS138N-E6327
DescriptionMOSFET N-CH 60V 230MA SOT-23
ManufacturerInfineon Technologies
SeriesSIPMOS®
BSS138N-E6327 datasheet
 

Specifications of BSS138N-E6327

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs3.5 Ohm @ 230mA, 10VDrain To Source Voltage (vdss)60V
Current - Continuous Drain (id) @ 25° C230mAVgs(th) (max) @ Id1.4V @ 250µA
Gate Charge (qg) @ Vgs1.4nC @ 10VInput Capacitance (ciss) @ Vds41pF @ 25V
Power - Max360mWMounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesBSS138E6327
BSS138INTR
BSS138INTR
BSS138NE6327XT
BSS138NEINTR
BSS138NEXTINTR
BXX138NEXTINTR
SP000014560
  
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®
SIPMOS
Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
Type
Package
BSS138N
PG-SOT-23
BSS138N
PG-SOT-23
Parameter
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD sensitivity
ESD sensitivity
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev. 2.82
Product Summary
V
DS
R
DS(on),max
I
D
Tape and Reel
Marking
L6327: 3000
SKs
L6433: 10000
SKs
Symbol Conditions
I
T
=25 °C
D
A
T
=70 °C
A
I
T
=25 °C
D,pulse
A
I
=0.23 A, V
=48 V,
D
DS
dv /dt
di /dt =200 A/µs,
T
=150 °C
j,max
V
GS
MIL-STD 883 (HBM)
JESD22-A114 (HBM)
P
T
=25 °C
tot
A
T
, T
j
stg
page 1
BSS138N
60
V
3.5
0.23
A
PG-SOT-23
Value
Unit
0.23
A
0.18
0.92
6
kV/µs
±20
V
Class 1 (<1999V)
Class 0 (<250V)
0.36
W
-55 ... 150
°C
55/150/56
2009-02-11

BSS138N-E6327 Summary of contents

  • Page 1

    ... A I =0. = /dt di /dt =200 A/µs, T =150 °C j,max V GS MIL-STD 883 (HBM) JESD22-A114 (HBM =25 °C tot stg page 1 BSS138N 60 V 3.5 Ω 0.23 A PG-SOT-23 Value Unit 0.23 A 0.18 0.92 6 kV/µs ±20 V Class 1 (<1999V) Class 0 (<250V) 0.36 W -55 ... 150 °C 55/150/56 ...

  • Page 2

    ... =250 µA (BR)DSS =26 µA GS(th = (off =25 ° = =150 ° = GSS =4 =0.03 A DS(on =4 =0. = =0. |>2 DS(on)max =0. page 2 BSS138N Values Unit min. typ. max 350 K 0.6 1.0 1 0.1 µ Ω - 3.3 4.0 - 3.5 6.0 - 2.2 3.5 , 0.1 0 2009-02-11 ...

  • Page 3

    ... MHz C rss t d( Ω I =0. d(off = =0. plateau =25 ° S,pulse =0. =25 ° = =0. /dt =100 A/µ page 3 BSS138N Values Unit min. typ. max 7.2 9.5 - 2.8 3.8 - 2.3 3 3.0 4 8.2 12.3 - 0.10 0. 0.3 0.4 - 1.0 1 0.92 - 0.83 1 9 2009-02-11 ...

  • Page 4

    ... Rev. 2.82 2 Drain current I =f 0.25 0.2 0.15 0.1 0. 120 160 0 [° Max. transient thermal impedance Z =f(t thJA p parameter µ 100 µ 100 100 10 [V] DS page 4 BSS138N ≥ 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 160 2009-02-11 ...

  • Page 5

    ... DS(on) parameter 4 3 3 Typ. forward transconductance g =f 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0. 0.00 [V] GS page 5 BSS138N ); T =25 ° 2 3 0.1 0.2 0.3 0.4 I [A] D =25 °C j 0.10 0.20 0.30 0.40 I [A] D 0.5 2009-02-11 ...

  • Page 6

    ... I 2 1.6 1.2 0.8 typ 0 100 140 -60 [° Forward characteristics of reverse diode =25° parameter Ciss -1 10 Coss -2 10 Crss - [V] DS page 6 BSS138N ); =26 µ %98 typ %2 - 100 140 T [° 150 °C, 98% 25 °C 25 °C, 98% 150 °C 0.4 0.8 1.2 1 [V] SD 2.4 2009-02-11 ...

  • Page 7

    ... Typ. gate charge V =f =0.23 A pulsed GS gate D parameter 0.2 0.4 Q gate Rev. 2.82 14 Drain-source breakdown voltage V =f(T BR(DSS -60 0.6 0.8 1 [nC] page 7 BSS138N ); I =250 µ - 100 140 T [°C] j 180 2009-02-11 ...

  • Page 8

    ... Package Outline: Footprint: Dimensions in mm Rev. 2.82 Packaging: page 8 BSS138N 2009-02-11 ...

  • Page 9

    ... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.82 page 9 BSS138N 2009-02-11 ...