MOSFET N-CH 650V 11A TO220FP

SPA11N60C3

Manufacturer Part NumberSPA11N60C3
DescriptionMOSFET N-CH 650V 11A TO220FP
ManufacturerInfineon Technologies
SeriesCoolMOS™
SPA11N60C3 datasheet
 


Specifications of SPA11N60C3

Package / CaseTO-220FPFet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureStandardRds On (max) @ Id, Vgs380 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)650VCurrent - Continuous Drain (id) @ 25° C11A
Vgs(th) (max) @ Id3.9V @ 500µAGate Charge (qg) @ Vgs60nC @ 10V
Input Capacitance (ciss) @ Vds1200pF @ 25VPower - Max33W
Mounting TypeThrough HoleMinimum Operating Temperature- 55 C
ConfigurationSingleTransistor PolarityN-Channel
Resistance Drain-source Rds (on)0.38 Ohm @ 10 VDrain-source Breakdown Voltage600 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current11 A
Power Dissipation33000 mWMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleContinuous Drain Current Id11A
Drain Source Voltage Vds650VOn Resistance Rds(on)380mohm
Rds(on) Test Voltage Vgs10VThreshold Voltage Vgs Typ3V
Rohs CompliantYesFall Time5 ns
Rise Time5 nsLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesSP000013664
SP000216312
SPA11N60C3IN
SPA11N60C3X
SPA11N60C3XTIN
SPA11N60C3XTIN
  
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Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type
Package
SPP11N60C3
PG-TO220
PG-TO262
SPI11N60C3
PG-TO220 FP
SPA11N60C3
PG-TO220
SPA11N60C3E8185
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, t
limited by T
p
Avalanche energy, single pulse
I
=5.5A, V
=50V
D
DD
Avalanche energy, repetitive t
I
=11A, V
=50V
D
DD
Avalanche current, repetitive t
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation,
T
= 25°C
C
Operating and storage temperature
7)
Reverse diode dv/dt
3 . 2
Rev.
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
PG-TO220FP
P-TO220-3-31
Ordering Code
Q67040-S4395
Q67042-S4403
Q67040-S4408
Q67040-S4408
Symbol
I
D
I
jmax
D puls
E
AS
2)
E
limited by T
AR
AR
jmax
limited by T
I
AR
jmax
AR
V
GS
V
GS
P
tot
T
j ,
dv/dt
Page 1
SPP11N60C3
V
@ T
650
DS
jmax
R
0.38
DS(on)
I
11
D
PG-TO262
PG-TO220
3
2
1
Marking
11N60C3
11N60C3
11N60C3
11N60C3
11N60C3
Value
SPA
SPP_I
1)
11
11
1)
7
7
33
33
340
340
0.6
0.6
11
11
±20
±20
±30
±30
125
33
T
-55...+150
stg
15
2009-11-27
V
A
Unit
A
A
mJ
A
V
W
°C
V/ns

SPA11N60C3 Summary of contents

  • Page 1

    ... V =50V D DD Avalanche current, repetitive t Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation 25°C C Operating and storage temperature 7) Reverse diode dv/ Rev. SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO220FP P-TO220-3-31 Ordering Code Q67040-S4395 Q67042-S4403 Q67040-S4408 Q67040-S4408 Symbol jmax D puls E AS ...

  • Page 2

    ... Electrical Characteristics =25°C unless otherwise specified Parameter Drain-source breakdown voltage V Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance R Gate input resistance Rev. SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Symbol dv/dt Symbol R thJC R thJC_FP R thJA R thJA_FP ...

  • Page 3

    ... C o(er fixed capacitance that gives the same charging time as C o(tr) 7 ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch Rev. SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Symbol Conditions ≥2 ...

  • Page 4

    ... Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol Value SPP_I R 0.015 th1 R 0.03 th2 R 0.056 th3 R 0.197 th4 R 0.216 th5 R 0.083 th6 P (t) tot . 3.2 Rev SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Symbol Conditions I T =25° =0V =480V /dt=100A/µ rrm di /dt T =25° ...

  • Page 5

    ... Power dissipation tot C SPP11N60C3 140 W 120 110 100 Safe operating area parameter : =25° 0.001 0. 0 Rev. SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 2 Power dissipation FullPAK tot 100 120 °C 160 Safe operating area FullPAK parameter Page 5 SPP11N60C3 ) 100 120 ) DS = 25° 0.001 0. 0.1 ms ...

  • Page 6

    ... Transient thermal impedance thJC p parameter K Typ. output characteristic =25° parameter µ 20V A 10V Rev SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 6 Transient thermal impedance FullPAK thJC parameter single pulse - Typ. output characteristic parameter Page 6 SPP11N60C3 0.01 single pulse ...

  • Page 7

    ... Typ. transfer characteristics ≥ parameter µ 25° 3.2 Rev. SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 10 Drain-source on-state resistance R DS(on) parameter : I 2.1 Ω 1.8 6V 5.5V 1.6 1.4 1.2 0.8 0.6 0.4 6.5V 8V 0.2 20V Typ. gate charge DS(on)max GS parameter 150° Page 7 ...

  • Page 8

    ... Typ. switching time inductive load par.: V =380V, V =0/+13V 350 ns 250 200 150 100 Rev. SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 14 Typ. switching time par 2 Typ. drain current slope =125°C di/dt = f(R j =11 A par 3000 A/µs 2000 td(off) 1500 td(on) tr ...

  • Page 9

    ... T G par.: V =380V, V =0/+13V 0.24 *) Eon includes SPD06S60 diode commutation losses mWs 0.16 Eoff 0.12 0.08 0. Rev SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 18 Typ. switching losses = 125° =11A par 0.04 mWs 0.03 0.025 0.02 0.015 0.01 0.005 Ω Avalanche SOA =125° ...

  • Page 10

    ... D DD 350 mJ 250 200 150 100 100 23 Avalanche power losses parameter: E =0.6mJ AR 300 W 200 150 100 Rev. SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 22 Drain-source breakdown voltage V (BR)DSS SPP11N60C3 720 V 680 660 640 620 600 580 560 540 120 °C 160 - Typ. capacitances parameter ...

  • Page 11

    ... Typ. C stored energy oss E =f(V ) oss DS 7.5 µJ 6 5.5 5 4.5 4 3.5 3 2.5 2 1 100 200 300 Definition of diodes switching characteristics . 3 .2 Rev SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 400 600 Page 11 SPP11N60C3 2009-11-27 ...

  • Page 12

    ... PG-TO-220-3-1, PG-TO-220-3-21 Rev. 3.2 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Page 12 SPP11N60C3 2009-11-27 ...

  • Page 13

    ... PG-TO-220-3-31/3-111: Outline/ Fully isolated package (2500VAC; 1 minute). Rev. 3.2 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Page 13 SPP11N60C3 2009-11-27 ...

  • Page 14

    ... PG-TO-262-3-1 (I²-PAK) Rev. 3.2 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Page 14 SPP11N60C3 2009-11-27 ...

  • Page 15

    ... PG-TO220-3-36:Outline fully isolated package (2500VAC; 1 minute) Rev. 3.2 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Page 15 SPP11N60C3 2009-11-27 ...

  • Page 16

    ... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. 3.2 Rev. SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Page 16 SPP11N60C3 2009-11-27 ...