IPD09N03LA G Infineon Technologies, IPD09N03LA G Datasheet

MOSFET N-CH 25V 50A DPAK

IPD09N03LA G

Manufacturer Part Number
IPD09N03LA G
Description
MOSFET N-CH 25V 50A DPAK
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD09N03LA G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.6 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2V @ 20µA
Gate Charge (qg) @ Vgs
13nC @ 5V
Input Capacitance (ciss) @ Vds
1642pF @ 15V
Power - Max
63W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPD09N03LA
IPD09N03LAG
IPD09N03LAGINTR
IPD09N03LAGXT
IPD09N03LAGXTINTR
IPD09N03LAGXTINTR
IPD09N03LAINTR
IPD09N03LAINTR
SP000017536
Rev. 2.12
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC
• N-channel, logic level
• Excellent gate charge x R
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
Package
Marking
®
2 Power-Transistor
IPD09N03LA
P-TO252-3-11
09N03LA
4)
j
=25 °C, unless otherwise specified
DS(on)
1)
product (FOM)
for target application
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
IPF09N03LA
P-TO252-3-23
09N03LA
stg
T
T
T
I
I
di /dt =200 A/µs,
T
T
D
D
page 1
C
C
C
j,max
C
=45 A, R
=50 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=175 °C
2)
3)
DS
GS
=20 V,
=25 Ω
Product Summary
V
R
I
D
DS
IPS09N03LA
P-TO251-3-11
09N03LA
DS(on),max
IPS09N03LA G
IPD09N03LA G
(SMD version)
-55 ... 175
55/175/56
Value
350
±20
50
45
75
63
6
IPU09N03LA
P-TO251-3-21
09N03LA
IPU09N03LA G
IPF09N03LA G
25
8.6
50
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A
2008-04-14

Related parts for IPD09N03LA G

IPD09N03LA G Summary of contents

Page 1

... Symbol Conditions =25 ° =100 ° =25 °C D,pulse C =25 Ω = = = /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA (SMD version) 8.6 mΩ IPU09N03LA P-TO251-3-21 09N03LA Value Unit 350 kV/µs ± -55 ... 175 °C 55/175/56 2008-04-14 ...

Page 2

... A DS( SMD version SMD version |>2 DS(on)max = =2.4 K/W the chip is able to carry 67 A. thJC <- (one layer, 70 µm thick) copper area for drain page 2 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA G Values Unit min. typ. max 2.4 K 1.2 1 0.1 1 µ 100 - 10 100 mΩ ...

Page 3

... DD GS =2.7 Ω d(off g( plateau V =0 g(sync = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA G Values Unit min. typ. max. - 1235 1642 pF - 474 630 - 7 5.6 8 3.4 5.1 - 4.3 5 2.0 2.6 - 2.8 4.3 - 5 350 - 0.97 1 2008-04-14 ...

Page 4

... Rev. 2.12 2 Drain current I =f 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 1 100 µ 0 0. 100 10 [V] DS page 4 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse [s] p 200 ...

Page 5

... V 7 Typ. transfer characteristics I =f |>2 DS(on)max parameter 100 175 ° Rev. 2.12 6 Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f ° [V] GS page 5 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA =25 ° 4.1 V 3.5 V 3.8 V 3 [A] D =25 ° [ 2008-04-14 ...

Page 6

... Forward characteristics of reverse diode I =f parameter: T 1000 Ciss 100 10 Crss 0.0 [V] DS page 6 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA 200 µA 20 µA - 100 140 T [° 175 °C, 98% 175 °C 25 °C, 98% 0.5 1.0 1.5 V [V] SD 180 25 °C 2 ...

Page 7

... Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 2.12 14 Typ. gate charge V =f(Q GS parameter ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA =25 A pulsed gate [nC] gate ate 2008-04-14 ...

Page 8

... Package Outline Rev. 2.12 IPD09N03LA G IPS09N03LA G PG-TO252-3-11 page 8 IPF09N03LA G IPU09N03LA G 2008-04-14 ...

Page 9

... Package Outline PG-TO252-3-23: Outline Footprint: Rev. 2.12 IPD09N03LA G IPS09N03LA G PG-TO252-3-23 page 9 IPF09N03LA G IPU09N03LA G 2008-04-14 ...

Page 10

... Package Outline Rev. 2.12 IPD09N03LA G IPS09N03LA G PG-TO251-3-11 page 10 IPF09N03LA G IPU09N03LA G 2008-04-14 ...

Page 11

... Package Outline Rev. 2.12 IPD09N03LA G IPS09N03LA G PG-TO251-3-21 page 11 IPF09N03LA G IPU09N03LA G 2008-04-14 ...

Page 12

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.12 IPD09N03LA G IPS09N03LA G page 12 IPF09N03LA G IPU09N03LA G ...

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