SPD30P06P Infineon Technologies, SPD30P06P Datasheet - Page 6

MOSFET P-CH 60V 30A DPAK

SPD30P06P

Manufacturer Part Number
SPD30P06P
Description
MOSFET P-CH 60V 30A DPAK
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of SPD30P06P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 21.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 1.7mA
Gate Charge (qg) @ Vgs
48nC @ 10V
Input Capacitance (ciss) @ Vds
1535pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000012842
SP000077529
SPD30P06PINTR
SPD30P06PT
SPD30P06PXTINTR
SPD30P06PXTINTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPD30P06P G
Manufacturer:
INFINEON
Quantity:
30 000
Company:
Part Number:
SPD30P06P G
Quantity:
8 000
Part Number:
SPD30P06PG
Manufacturer:
INFINEON/英飞凌
Quantity:
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Part Number:
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0
Part Number:
SPD30P06PGBTMA1
Manufacturer:
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Quantity:
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Typ. output characteristic
I
parameter: t
Typ. transfer characteristics I
V
parameter: t
D
DS
= f ( V
Rev 2.0
A
A
³
-75
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-60
-40
-30
-20
-10
-5
0
0
2 x I
0
0
SPD30P06P
DS
P
tot
-1
D
); T
= 125.00W
-2
p
x R
p
-2
= 80 µs
= 80 µs
j
=25°C
DS(on)max
-3
-4
k
-4
-6
j
-5
-6
-8
-7
i
g
e
c
a
D
h
f
d
b
-10
V GS [V]
= f ( V
a
b
c
d
e
f
g
h
i
j
k
-8
V
V
V
V
-10.0
DS
GS
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
-7.5
-8.0
-9.0
GS
-13
-10
Page 6
)
Typ. drain-source-on-resistance
R
parameter: V
Typ. forward transconductance
g
parameter: g
fs
DS(on)
= f( I
0.26
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
W
S
13
11
10
9
8
7
6
5
4
3
2
1
0
0
0
D
SPD30P06P
V
c
= f ( I
-5.0
GS
); T
c
-1
[V] =
-5.5
-10
d
j
=25°C
D
fs
GS
-2
d
)
-6.0
e
-3
-6.5
-20
e
f
-7.0
-4
g
f
-7.5
-30
h
-5
g
-8.0
i
SPD30P06P
SPU30P06P
-6
-9.0
-40
j
h
-7
2008-02-18
-10.0
k
-8
A
i
j
I
A
I
D
D
k
-60
-10

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