SPD30P06P Infineon Technologies, SPD30P06P Datasheet - Page 8

• Manufacturer Part Number: SPD30P06P
• Description: MOSFET P-CH 60V 30A DPAK
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPD30P06P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 21.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 1.7mA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 1535pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000012842; SP000077529; SPD30P06PINTR; SPD30P06PT; SPD30P06PXTINTR; SPD30P06PXTINTR

Drain-source breakdown voltage
V
Avalanche energy
E
para.: I
(BR)DSS
AS
mJ
Rev 2.0
260
220
200
180
160
140
120
100
V
-72
-68
-66
-64
-62
-60
-58
-56
-54
= f ( T
80
60
40
20
0
-60
25
D
SPD30P06P
= -30 A , V
= f ( T
j
45
)
-20
65
j
)
20
85
DD
60
105
= -25 V, R
100
125
145
140
GS
°C
°C
T
T
= 25
j
j
185
200
W
Page 8
Typ. gate charge
V
parameter: I
GS
V
-16
-12
-10
= f ( Q
-8
-6
-4
-2
0
0
SPD30P06P
Gate
D
10
= -30 A pulsed
0,2
)
V
DS max
20
30
SPD30P06P
SPU30P06P
0,8
40
2008-02-18
V
DS max
nC
Q
Gate
55