MTP2P50E ON Semiconductor, MTP2P50E Datasheet - Page 26

• Manufacturer Part Number: MTP2P50E
• Description: MOSFET P-CH 500V 2A TO-220AB
• Manufacturer: ON Semiconductor

Specifications of MTP2P50E

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 1183pF @ 25V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 6 Ohms
• Forward Transconductance Gfs (max / Min): 0.5 S
• Drain-source Breakdown Voltage: - 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MTP2P50EOS

Issue Date: 03 Jan 2008
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Leaded EOL Parts
Rev.08-24-05
G Replacement Part
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