BSS84LT1 ON Semiconductor, BSS84LT1 Datasheet

MOSFET P-CH 50V 130MA SOT-23

BSS84LT1

Manufacturer Part Number
BSS84LT1
Description
MOSFET P-CH 50V 130MA SOT-23
Manufacturer
ON Semiconductor
Datasheet

Specifications of BSS84LT1

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 Ohm @ 100mA, 5V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
130mA
Vgs(th) (max) @ Id
2V @ 250µA
Input Capacitance (ciss) @ Vds
30pF @ 5V
Power - Max
225mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Gate Charge (qg) @ Vgs
-
Other names
BSS84LT1OSCT

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BSS84LT1
Power MOSFET
130 mA, 50 V
P−Channel SOT−23
conserve energy, making this device ideal for use in small power
management circuitry. Typical applications are DC−DC converters,
load switching, power management in portable and battery−powered
products such as computers, printers, cellular and cordless telephones.
Features
June, 2004 − Rev. 5
MAXIMUM RATINGS
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
Total Power Dissipation @ T
Operating and Storage Temperature
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering
These miniature surface mount MOSFETs reduce power loss
Energy Efficient
Miniature SOT−23 Surface Mount Package Saves Board Space
Pb−Free Package is Available
Semiconductor Components Industries, LLC, 2004
Range
Purposes, for 10 seconds
− Continuous @ T
− Pulsed Drain Current (t
Rating
A
= 25 C
(T
J
= 25 C unless otherwise noted)
A
p
= 25 C
10 ms)
Symbol
T
V
R
J
V
I
P
, T
DSS
DM
T
I
qJA
GS
D
D
L
stg
− 55 to
Value
130
520
225
150
556
260
50
20
1
Unit
Vdc
Vdc
mW
C/W
mA
C
C
†For information on tape and reel specifications,
BSS84LT1
BSS84LT1G
MARKING DIAGRAM & PIN ASSIGNMENT
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
PD
M
130 mA, 50 V R
Device
1
ORDERING INFORMATION
= Device Code
= Date Code
1
2
http://onsemi.com
(Pb−Free)
Package
SOT−23
SOT−23
3
P−Channel
Publication Order Number:
3
2
DS(on)
Gate
1
3000 Tape & Reel
3000 Tape & Reel
CASE 318
STYLE 21
SOT−23
PDM
Drain
Shipping
3
= 10 W
BSS84LT1/D
Source
2

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BSS84LT1 Summary of contents

Page 1

... W DS(on) P−Channel SOT−23 CASE 318 1 STYLE Drain = Device Code PDM = Date Code 1 2 Gate Source ORDERING INFORMATION † Device Package Shipping SOT−23 3000 Tape & Reel SOT−23 3000 Tape & Reel (Pb−Free) Publication Order Number: BSS84LT1/D ...

Page 2

... Pulse Test: Pulse Width 2. Switching characteristics are independent of operating junction temperature. TYPICAL ELECTRICAL CHARACTERISTICS 0 0.5 0.4 0.3 0.2 0 1 GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 1. Transfer Characteristics BSS84LT1 ( unless otherwise noted) A Symbol V (BR)DSS = 0 Vdc 5.0 Vdc 5.0 Vdc 5.0 Vdc − ...

Page 3

... D Figure 3. On−Resistance versus Drain Current 2 1.8 1.6 1.4 1.2 1 0.8 0.6 −55 − JUNCTION TEMPERATURE ( C) J Figure 5. On−Resistance Variation with Temperature 1 0.1 0.01 0.001 0 BSS84LT1 6.5 GS 150 C 6 5 3.5 3 −55 C 2.5 2 0.5 0.6 0 0.1 Figure 4. On−Resistance versus Drain Current ...

Page 4

... L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN 2.0 0.079 mm inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. BSS84LT1/D ...

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