MOSFET N-CH 25V 7.8A IPAK

 

NTD40N03R-1G

Manufacturer Part NumberNTD40N03R-1G
DescriptionMOSFET N-CH 25V 7.8A IPAK
ManufacturerON Semiconductor
NTD40N03R-1G datasheets

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Specifications of NTD40N03R-1G

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs16.5 mOhm @ 10A, 10VDrain To Source Voltage (vdss)25V
Current - Continuous Drain (id) @ 25° C7.8AVgs(th) (max) @ Id2V @ 250µA
Gate Charge (qg) @ Vgs5.78nC @ 4.5VInput Capacitance (ciss) @ Vds584pF @ 20V
Power - Max1.5WMounting TypeSurface Mount
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.0126 Ohms
Forward Transconductance Gfs (max / Min)20 SDrain-source Breakdown Voltage25 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current45 A
Power Dissipation2.1 WMaximum Operating Temperature+ 175 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesNTD40N03R-1GOS
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NTD40N03R
Power MOSFET
45 Amps, 25 Volts
N−Channel DPAK
Features
•
Planar HD3e Process for Fast Switching Performance
•
Low R
to Minimize Conduction Loss
DS(on)
•
Low C
to Minimize Driver Loss
iss
•
Low Gate Charge
•
Optimized for High Side Switching Requirements in
High−Efficiency DC−DC Converters
•
Pb−Free Packages are Available
MAXIMUM RATINGS
(T
= 25°C unless otherwise specified)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ T
= 25°C
C
Drain Current
− Continuous @ T
= 25°C, Chip
C
− Continuous @ T
= 25°C, Limited by Wires
A
− Single Pulse (tp ≤ 10 ms)
Thermal Resistance − Junction−to−Ambient
(Note 1)
− Total Power Dissipation @ T
= 25°C
A
− Drain Current − Continuous @ T
= 25°C
A
Thermal Resistance − Junction−to−Ambient
(Note 2)
− Total Power Dissipation @ T
= 25°C
A
− Drain Current − Continuous @ T
= 25°C
A
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq. in pad size.
2. When surface mounted to an FR4 board using minimum recommended
pad size.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 6
45 AMPERES, 25 VOLTS
R
Symbol
Value
Unit
V
25
Vdc
DSS
±20
V
Vdc
GS
°C/W
3.0
R
qJC
P
50
W
D
45
A
I
D
I
32
A
D
I
100
A
1 2
D
°C/W
R
71.4
qJA
P
2.1
W
D
CASE 369AA
I
9.2
A
D
°C/W
(Surface Mount)
R
100
qJA
STYLE 2
1.5
W
P
D
I
7.8
A
D
°C
T
, T
−55 to
J
stg
175
°C
T
260
L
1
Gate
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1
http://onsemi.com
= 12.6 mW (Typ)
DS(on)
N−CHANNEL
D
G
S
4
4
1
3
2
3
CASE 369D
DPAK
DPAK
(Straight Lead)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain
4 Drain
3
2
Source
1
3
Drain
Gate
Source
2
Drain
Y
= Year
WW
= Work Week
T40N03
= Device Code
G
= Pb−Free Package
ORDERING INFORMATION
Publication Order Number:
NTD40N03R/D

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NTD40N03R-1G Summary of contents

  • Page 1

    ... DS(on) N−CHANNEL CASE 369D DPAK DPAK (Straight Lead) STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENTS 4 Drain 4 Drain 3 2 Source 1 3 Drain Gate Source 2 Drain Y = Year WW = Work Week T40N03 = Device Code G = Pb−Free Package ORDERING INFORMATION Publication Order Number: NTD40N03R/D ...

  • Page 2

    ... SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage ( Reverse Recovery Time Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. NTD40N03R (T = 25°C unless otherwise specified) J V(br) = 150° Vdc MHz) ...

  • Page 3

    ... DRAIN CURRENT (AMPS) D Figure 3. On−Resistance versus Drain Current and Temperature 1 1.6 GS 1.4 1.2 1 0.8 0.6 −50 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTD40N03R 20 ≥ GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 2. Transfer Characteristics 0.040 0.032 0.024 ...

  • Page 4

    ... Figure 7. Capacitance Variation 100 d(off d(on GATE RESISTANCE (W) G Figure 9. Resistive Switching Time Variation versus Gate Resistance 100 SINGLE PULSE 0.1 Figure 11. Maximum Rated Forward Biased NTD40N03R 25° iss oss 2 C rss Drain−to−Source Voltage versus Total Charge 25° 100 ...

  • Page 5

    ... SINGLE PULSE 0.01 0.00001 0.0001 ORDERING INFORMATION Device NTD40N03R NTD40N03RG NTD40N03R−1 NTD40N03R−1G NTD40N03RT4 NTD40N03RT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTD40N03R P (pk DUTY CYCLE ...

  • Page 6

    ... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTD40N03R PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369AA−01 ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6.20 3 ...

  • Page 7

    ... S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTD40N03R/D ...

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