NTP27N06G ON Semiconductor, NTP27N06G Datasheet

MOSFET N-CH 60V 27A TO220AB

NTP27N06G

Manufacturer Part Number
NTP27N06G
Description
MOSFET N-CH 60V 27A TO220AB
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTP27N06G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
46 mOhm @ 13.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
27A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
1015pF @ 25V
Power - Max
88.2W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTP27N06GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTP27N06G
Manufacturer:
ON
Quantity:
12 500
NTP27N06
Power MOSFET
27 Amps, 60 Volts
N−Channel TO−220
power supplies, converters, power motor controls and bridge circuits.
Features
Typical Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
January, 2005 − Rev. 3
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Derate above 25 C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(V
L = 0.3 mH, I
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
Designed for low voltage, high speed switching applications in
Higher Current Rating
Lower R
Lower V
Lower Capacitances
Pb−Free Package is Available
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
Semiconductor Components Industries, LLC, 2005
DD
= 50 Vdc, V
− Continuous
− Non−Repetitive (t
− Continuous @ T
− Continuous @ T
− Single Pulse (t
DS(on)
DS(on)
L
(pk) = 27 A,V
Rating
GS
J
= 10 Vdc,
= 25 C
(T
GS
C
p
DS
v10 ms)
= 25 C unless otherwise noted)
A
A
A
= 10 MW)
p
= 25 C
100 C
= 25 C
= 60 Vdc)
v10 ms)
Symbol
T
V
V
R
J
V
V
E
I
P
DGR
, T
T
DSS
DM
I
I
qJC
GS
GS
D
D
AS
D
L
stg
−55 to +175
Value
"20
"30
88.2
0.59
109
260
1.7
60
60
27
15
80
1
W/ C
Unit
Vdc
Vdc
Vdc
Adc
Apk
C/W
mJ
W
C
C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
MARKING DIAGRAM & PIN ASSIGNMENT
27 AMPERES, 60 VOLTS
1
ORDERING INFORMATION
NTP27N06 = Device Code
A
Y
WW
2
G
3
R
Gate
http://onsemi.com
DS(on)
1
4
NTP27N06
AYWW
N−Channel
Drain
Drain
D
4
= Assembly Location
= Year
= Work Week
2
= 46 mW
Publication Order Number:
CASE 221A
TO−220AB
S
STYLE 5
3
Source
NTP27N06/D

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NTP27N06G Summary of contents

Page 1

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2005 January, 2005 − Rev. 3 ...

Page 2

... Pulse Test: Pulse Width 2. Switching characteristics are independent of operating junction temperature. ORDERING INFORMATION Device NTP27N06 NTP27N06G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTP27N06 ( unless otherwise noted) ...

Page 3

DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.095 ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

TOTAL GATE CHARGE (nC) G Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS ...

Page 6

SINGLE PULSE 100 LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 1 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum ...

Page 7

PACKAGE DIMENSIONS NTP27N06 TO−220 CASE 221A−09 ISSUE AA NOTES: SEATING −T− 1. DIMENSIONING AND TOLERANCING PER ANSI PLANE Y14.5M, 1982 ...

Page 8

... Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NTP27N06 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 ON Semiconductor Website: http://onsemi ...

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