BSP603S2L Infineon Technologies, BSP603S2L Datasheet

MOSFET N-CH 55V 5.2A SOT-223

BSP603S2L

Manufacturer Part Number
BSP603S2L
Description
MOSFET N-CH 55V 5.2A SOT-223
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSP603S2L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
33 mOhm @ 2.6A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
5.2A
Vgs(th) (max) @ Id
2V @ 50µA
Gate Charge (qg) @ Vgs
42nC @ 10V
Input Capacitance (ciss) @ Vds
1390pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSP603S2LT
SP000013597
SP000431792
OptiMOS
Feature



Type
BSP603S2L
Maximum Ratings, at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
A
A
A
A
N-Channel
Enhancement mode
Logic Level
=25°C
=70°C
=25°C
=25°C

Power-Transistor
Package
SOT 223
j
= 25 °C, unless otherwise specified
Ordering Code
Q67060-S7213
Page 1
Symbol
I
I
V
P
T
D
D puls
j ,
GS
tot
T
stg
Marking
2N603L
-55... +150
55/150/00
Product Summary
V
R
I
Value
D
± 20
DS
DS(on)
5.2
4.1
1.8
21
SOT 223
BSP603S2L
2002-06-11
5.2
55
33
Unit
A
V
W
°C
V
m
A


Related parts for BSP603S2L

BSP603S2L Summary of contents

Page 1

... Power dissipation =25° Operating and storage temperature IEC climatic category; DIN IEC 68-1 Ordering Code Q67060-S7213 = 25 °C, unless otherwise specified Symbol puls tot Page 1 BSP603S2L Product Summary DS(on SOT 223 Marking 2N603L Value 5.2 4.1 21 ± 20 1.8 T -55... +150 stg 55/150/00 ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Symbol R thJS R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = V V GS(th DSS I GSS R DS(on) R DS(on) Page 2 BSP603S2L Values Unit min. typ. max K 120 - - 70 Values Unit min. typ. max ...

Page 3

... C rss =30V, V =4.5V d(on =5.2A =30V, V =4.5V =5.2mA d(off) =5 =44V, I =5. =44V, I =5.2A 10V =44V, I =5.2A (plateau =25° =0V, I =5. =30V /dt=100A/µ Page 3 BSP603S2L Values Unit min. typ. max. 8.9 17 1034 1390 pF - 244 325 - 75 110 - 10 3 0.8 1 2002-06-11 ...

Page 4

... Safe operating area parameter : BSP603S2L Drain current = parameter 4.5 3.5 2.5 1.5 0.5 °C 100 120 160 Max. transient thermal impedance Z thJC parameter : K 160.0µ Page 4 BSP603S2L ) BSP603S2L 100 120 = BSP603S2L single pulse - 2002-06-11 °C 160 0.50 0.20 0.10 0.05 0.02 0. ...

Page 5

... Typ. transfer characteristics parameter µ 0.5 1 1.5 6 Typ. drain-source on resistance R DS(on) parameter [V] a 2.8 b 3.0 c 3 3.6 f 3.8 g 4.0 h 4 Typ. forward transconductance = DS(on)max fs parameter 2 Page 5 BSP603S2L = BSP603S2L 110  [ 3.4 3.6 3.8 4.0 4.5 10 =25° 2002-06-11 ...

Page 6

... Typ. gate threshold voltage V GS(th parameter: V 2.5 V 1.5 1 0.5 0 °C 100 180 Forward character. of reverse diode parameter iss 10 C oss C rss Page 6 BSP603S2L = 250 -60 - 100 ) µ BSP603S2L °C typ 150 °C typ °C (98 150 °C (98 0.4 0.8 1.2 1.6 2 2002-06-11 °C 160 ...

Page 7

... Typ. gate charge = Gate GS parameter 5.2 A pulsed D BSP603S2L 0,2 DS max Drain-source breakdown voltage V (BR)DSS parameter 0 max Gate Page 7 BSP603S2L = = BSP603S2L -60 - 100 °C 180 T j 2002-06-11 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Page 8 BSP603S2L 2002-06-11 ...

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