BSS138N E7854 Infineon Technologies, BSS138N E7854 Datasheet - Page 2

• Manufacturer Part Number: BSS138N E7854
• Description: MOSFET N-CH 60V 230MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS138N E7854

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 230mA
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 41pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS138NE7854XT; SP000014562

Rev. 2.82
Parameter
Thermal characteristics
Thermal resistance,
junction - minimal footprint
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
j
=25 °C, unless otherwise specified
Symbol Conditions
R
V
V
I
I
R
g
D (off)
GSS
fs
(BR)DSS
GS(th)
thJA
DS(on)
V
V
V
V
V
V
V
V
V
V
|V
I
D
page 2
GS
GS
DS
GS
DS
GS
GS
GS
GS
GS
=0.18 A
DS
=60 V,
=60 V,
= 0 V, I
=V
=0 V, T
=0 V, T
=20 V, V
=4.5 V, I
=4.5 V, I
=10 V, I
|>2|I
DS
, I
D
|R
D
D
j
j
=25 °C
=150 °C
D
=250 µA
=26 µA
D
D
DS
DS(on)max
=0.23 A
=0.03 A
=0.19 A
=0 V
,
min.
0.6
0.1
60
-
-
-
-
-
-
-
Values
typ.
1.0
3.3
3.5
2.2
0.2
1
-
-
-
-
max.
350
1.4
0.1
4.0
6.0
3.5
10
5
-
-
BSS138N
Unit
K/W
V
µA
nA
Ω
S
2009-02-11