BSS138N E7854 Infineon Technologies, BSS138N E7854 Datasheet - Page 5

• Manufacturer Part Number: BSS138N E7854
• Description: MOSFET N-CH 60V 230MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS138N E7854

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 230mA
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 41pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS138NE7854XT; SP000014562

Rev. 2.82
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
D
D
=f(V
=f(V
0.6
0.5
0.4
0.3
0.2
0.1
0.6
0.5
0.4
0.3
0.2
0.1
DS
0
GS
0
); T
0
0
); |V
j
=25 °C
GS
DS
|>2|I
V 10
1
1
D
V 7
|R
DS(on)max
2
2
V 5
V
V
DS
GS
[V]
[V]
V 4.5
3
3
4
4
V 2.9
V 3.2
V 3.5
V 4
page 5
5
5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
0.35
0.25
0.15
0.05
0.4
0.3
0.2
0.1
10
D
0
=f(I
8
6
4
2
0
0.00
); T
0
D
j
); T
=25 °C
GS
j
=25 °C
0.10
0.1
2.9 V
0.2
0.20
3.2 V
I
I
D
D
[A]
[A]
3.5 V
0.3
0.30
0.4
BSS138N
0.40
4 V
10 V
4.5 V
7 V
5 V
2009-02-11
0.5