BSS138N E8004 Infineon Technologies, BSS138N E8004 Datasheet - Page 6

• Manufacturer Part Number: BSS138N E8004
• Description: MOSFET N-CH 60V 230MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS138N E8004

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 230mA
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 41pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS138NE8004XT; SP000014563

Rev. 2.82
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
DS
=f(T
8
6
4
2
0
2
1
0
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz; T
-20
=0.23 A; V
10
20
%98
GS
V
T
DS
j
=10 V
[°C]
[V]
60
j
typ
=25°C
20
100
Coss
140
Ciss
Crss
page 6
30
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1.6
1.2
0.8
0.4
10
10
10
10
2
0
=f(T
SD
-1
-2
-3
-60
0
)
0
j
); V
D
j
DS
-20
0.4
150 °C
=V
GS
; I
0.8
20
D
=26 µA
25 °C
T
V
j
SD
1.2
[°C]
150 °C, 98%
60
[V]
%98
typ
%2
25 °C, 98%
1.6
100
BSS138N
2
140
2009-02-11
2.4