BSS138N E8004 Infineon Technologies, BSS138N E8004 Datasheet - Page 7

• Manufacturer Part Number: BSS138N E8004
• Description: MOSFET N-CH 60V 230MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS138N E8004

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 230mA
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 41pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS138NE8004XT; SP000014563

Rev. 2.82
13 Typ. gate charge
V
parameter: V
GS
=f(Q
12
10
8
6
4
2
0
0
gate
); I
DD
D
=0.23 A pulsed
0.2
0.4
Q
12 V
gate
[nC]
0.6
48 V
0.8
30 V
page 7
1
14 Drain-source breakdown voltage
V
BR(DSS)
70
65
60
55
50
-60
=f(T
j
); I
-20
D
=250 µA
20
T
j
60
[°C]
100
BSS138N
140
2009-02-11
180