BSS138W E6433 Infineon Technologies, BSS138W E6433 Datasheet - Page 3

• Manufacturer Part Number: BSS138W E6433
• Description: MOSFET N-CH 60V 280MA SOT-323
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS138W E6433

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 200mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 280mA
• Vgs(th) (max) @ Id: 1.4V @ 26µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 43pF @ 25V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS138WE6433; SP000014284

Rev. 2.41
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1 MHz
V
I
V
V
T
V
T
V
di
D
A
j
GS
DD
DD
GS
GS
R
=0.2 A, R
=25 °C
F
=25 °C
=30 V, I
page 3
/dt =100 A/µs
=0 V, V
=30 V, V
=48 V, I
=0 to 10 V
=0 V, I
F
F
DS
=0.28 A,
G
=0.28 A,
D
GS
=6 Ω
=0.2 A,
=25 V,
=10 V,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.10
0.85
typ.
7.2
2.8
2.2
3.0
6.7
8.2
0.3
1.0
3.2
8.3
3.3
32
-
-
max.
0.13
0.28
1.12
12.4
4.2
3.3
4.5
0.4
1.5
1.2
43
10
10
12
BSS138W
5
-
Unit
pF
ns
nC
V
A
V
ns
nC
2009-11-19