IPD09N03LB G Infineon Technologies, IPD09N03LB G Datasheet - Page 11

• Manufacturer Part Number: IPD09N03LB G
• Description: MOSFET N-CH 30V 50A DPAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD09N03LB G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.1 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 13nC @ 5V
• Input Capacitance (ciss) @ Vds: 1600pF @ 15V
• Power - Max: 58W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD09N03LBGXT; SP000016412

IPD09N03LB G IPF09N03LB G
IPS09N03LB G IPU09N03LB G
Package Outline
PG-TO251-3-21
Rev. 1.55
page 11
2008-04-14