IPD09N03LB G Infineon Technologies, IPD09N03LB G Datasheet - Page 4

• Manufacturer Part Number: IPD09N03LB G
• Description: MOSFET N-CH 30V 50A DPAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD09N03LB G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.1 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 13nC @ 5V
• Input Capacitance (ciss) @ Vds: 1600pF @ 15V
• Power - Max: 58W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD09N03LBGXT; SP000016412

Rev. 1.55
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
1000
100
60
50
40
30
20
10
10
DS
1
0
0.1
C
0
); T
)
C
p
=25 °C; D =0
limited by on-state
resistance
50
1
DC
T
V
C
DS
100
[°C]
[V]
100 µs
1 ms
10 ms
10 µs
10
150
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
0.001
0.01
=f(t
0.1
10
60
40
20
C
1
0
10
); V
p
0
0
)
-6
0.5
0.2
0.05
0.02
0.01
0.1
GS
≥10 V
10
p
0
IPS09N03LB G IPU09N03LB G
IPD09N03LB G IPF09N03LB G
-5
/T
single pulse
50
10
0
-4
T
t
C
100
10
p
[°C]
0
[s]
-3
10
0
-2
150
10
0
-1
2008-04-14
200
10
1
0