IPD09N03LB G Infineon Technologies, IPD09N03LB G Datasheet - Page 6

• Manufacturer Part Number: IPD09N03LB G
• Description: MOSFET N-CH 30V 50A DPAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD09N03LB G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.1 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 13nC @ 5V
• Input Capacitance (ciss) @ Vds: 1600pF @ 15V
• Power - Max: 58W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD09N03LBGXT; SP000016412

Rev. 1.55
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10000
1000
100
20
18
16
14
12
10
10
DS
=f(T
8
6
4
2
0
-60
0
); V
j
); I
GS
D
-20
=0 V; f =1 MHz
=50 A; V
5
20
10
GS
98 %
V
=10 V
T
Coss
DS
j
Crss
60
15
[°C]
Ciss
[V]
typ
100
20
140
25
180
page 6
30
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
2.5
1.5
0.5
10
=f(T
SD
2
1
0
1
-60
0.0
)
j
); V
D
j
GS
-20
IPS09N03LB G IPU09N03LB G
IPD09N03LB G IPF09N03LB G
=V
0.5
175 °C
DS
20
20 µA
V
T
SD
j
1.0
60
[°C]
[V]
200 µA
100
1.5
140
25 °C, 98%
175 °C, 98%
25 °C
2008-04-14
180
2.0