IPD09N03LB G Infineon Technologies, IPD09N03LB G Datasheet - Page 7

• Manufacturer Part Number: IPD09N03LB G
• Description: MOSFET N-CH 30V 50A DPAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD09N03LB G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.1 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 13nC @ 5V
• Input Capacitance (ciss) @ Vds: 1600pF @ 15V
• Power - Max: 58W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD09N03LBGXT; SP000016412

Rev. 1.55
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
38
36
34
32
30
28
26
24
22
20
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
-20
=25 Ω
D
=1 mA
10
20
t
T
AV
j
60
[°C]
[µs]
150 °C
100
100
100 °C
140
25 °C
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=25 A pulsed
g s
IPS09N03LB G IPU09N03LB G
IPD09N03LB G IPF09N03LB G
5
Q
Q
gate
g
Q
10
sw
[nC]
Q
g d
15
6 V
24 V
Q
15 V
g ate
2008-04-14
20