MOSFET N-CH 55V 100A TO-220

IPP100N06S3-04

Manufacturer Part NumberIPP100N06S3-04
DescriptionMOSFET N-CH 55V 100A TO-220
ManufacturerInfineon Technologies
SeriesOptiMOS™
IPP100N06S3-04 datasheet
 

Specifications of IPP100N06S3-04

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs4.4 mOhm @ 80A, 10VDrain To Source Voltage (vdss)55V
Current - Continuous Drain (id) @ 25° C100AVgs(th) (max) @ Id4V @ 150µA
Gate Charge (qg) @ Vgs314nC @ 10VInput Capacitance (ciss) @ Vds14230pF @ 25V
Power - Max214WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesIPP100N06S3-04
IPP100N06S3-04IN
IPP100N06S304X
IPP100N06S304XK
SP000102212
  
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OptiMOS
®
-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Type
Package
IPB100N06S3-04
PG-TO263-3-2
IPI100N06S3-04
PG-TO262-3-1
IPP100N06S3-04
PG-TO220-3-1
Maximum ratings, at T
=25 °C, unless otherwise specified
j
Parameter
1)
Continuous drain current
2)
Pulsed drain current
Avalanche energy, single pulse
Avalanche current, single pulse
3)
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev. 1.1
Product Summary
V
R
I
PG-TO263-3-2
Marking
3PN0604
3PN0604
3PN0604
Symbol
Conditions
I
T
=25 °C, V
D
C
GS
T
=100 °C,
C
2)
V
=10 V
GS
I
T
=25 °C
D,pulse
C
2)
E
I
=50 A
AS
D
I
AS
V
GS
P
T
=25 °C
tot
C
T
, T
j
stg
page 1
IPB100N06S3-04
IPI100N06S3-04, IPP100N06S3-04
DS
(SMD version)
DS(on),max
D
PG-TO262-3-1
PG-TO220-3-1
Value
=10 V
100
100
400
1090
100
±20
214
-55 ... +175
55/175/56
55
V
4.1
m
100
A
Unit
A
mJ
A
V
W
°C
2007-11-07

IPP100N06S3-04 Summary of contents

  • Page 1

    ... Marking 3PN0604 3PN0604 3PN0604 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse = =25 °C tot stg page 1 IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 DS (SMD version) DS(on),max D PG-TO262-3-1 PG-TO220-3-1 Value =10 V 100 100 400 1090 100 ±20 214 -55 ... +175 55/175/ 4.1 m 100 A Unit °C 2007-11-07 ...

  • Page 2

    ... (BR)DSS =150 µA GS(th = DSS T =25 ° = =125 ° = GSS = =80 A DS( SMD version page 2 IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 Values min. typ. max 0 2.1 3 100 = 100 - 3.5 4.4 - 3.2 4.1 Unit K µA nA mΩ 2007-11-07 ...

  • Page 3

    ... S T =25 ° S,pulse = =25 ° =27 /dt =100 A/µ 0.7 K/W the chip is able to carry 164 A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 Values min. typ. max. - 14230 = 2165 - 2070 - 209 - 5 0.6 0.9 ...

  • Page 4

    ... V DS Rev. 1.1 2 Drain current 120 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µs 100 µ 100 [V] page 4 IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2007-11-07 ...

  • Page 5

    ... GS DS parameter 200 175 150 125 100 Rev. 1.1 6 Typ. drain-source on-state resistance DS(on) parameter [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 6 -55 °C 25 °C 175 ° [V] page 5 IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3- ° 5 [ -60 - 100 T [° 100 120 140 180 2007-11-07 ...

  • Page 6

    ... V SD Rev. 1.1 10 Typ. capacitances 1500µ 100 140 180 12 Typ. avalanche characteristics parameter: T 1000 100 25 ° 0.8 1 1.2 1.4 [V] page 6 IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3- MHz GS Ciss Coss Crss [ j(start) 100°C 150° 100 t [µ 25°C 1000 2007-11-07 ...

  • Page 7

    ... A 500 100 T [° Typ. gate charge pulsed GS gate D parameter 100 150 Q gate Rev. 1.1 14 Typ. drain-source breakdown voltage V BR(DSS 150 200 16 Gate charge waveforms 200 250 300 [nC] page 7 IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3- -60 - 100 T [° 140 180 gate gate 2007-11-07 ...

  • Page 8

    ... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 IPI100N06S3-04, IPP100N06S3-04 page 8 IPB100N06S3-04 2007-11-07 ...

  • Page 9

    ... Data Sheet 2.1 Data Sheet 2.1 Data Sheet 2.1 Data Sheet 2.1 Data Sheet 2.1 Data Sheet 1.1 Data Sheet 1.1 Data Sheet 1.1 Data Sheet 1.1 Rev. 1.1 IPI100N06S3-04, IPP100N06S3-04 Date 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 07.11.2007 07.11.2007 07 ...