IPP100N06S3-04 Infineon Technologies, IPP100N06S3-04 Datasheet - Page 5

• Manufacturer Part Number: IPP100N06S3-04
• Description: MOSFET N-CH 55V 100A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP100N06S3-04

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.4 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 314nC @ 10V
• Input Capacitance (ciss) @ Vds: 14230pF @ 25V
• Power - Max: 214W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPP100N06S3-04; IPP100N06S3-04IN; IPP100N06S304X; IPP100N06S304XK; SP000102212

Rev. 1.1
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
200
175
150
125
100
250
200
150
100
75
50
25
50
0
0
DS
GS
2
0
); T
); V
GS
j
j
DS
= 25 °C
10 V
3
= 6V
2
4
V
V
GS
DS
5
4
7 V
6.5 V
6 V
5.5 V
5 V
4.5 V
[V]
[V]
6
-55 °C
6
25 °C
7
175 °C
page 5
8
8
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
14
12
10
8
6
4
2
0
6
5
4
3
2
= (I
= f(T
-60
0
D
); T
j
); I
GS
IPI100N06S3-04, IPP100N06S3-04
5 V
-20
20
j
D
= 25 °C
= 80 A; V
40
20
5.5 V
GS
T
I
D
j
60
60
= 10 V
[°C]
[A]
IPB100N06S3-04
6 V
100
80
100
140
2007-11-07
10 V
8 V
120
180