SPB80N06S2-08 Infineon Technologies, SPB80N06S2-08 Datasheet

MOSFET N-CH 55V 80A D2PAK

SPB80N06S2-08

Manufacturer Part Number
SPB80N06S2-08
Description
MOSFET N-CH 55V 80A D2PAK
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of SPB80N06S2-08

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 58A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 150µA
Gate Charge (qg) @ Vgs
96nC @ 10V
Input Capacitance (ciss) @ Vds
3800pF @ 25V
Power - Max
215W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
SP000016356
SPB80N06S208T

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPB80N06S2-08
Manufacturer:
INFINEON
Quantity:
12 500
OptiMOS
Feature
• N-Channel
• Enhancement mode
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
Type
SPP80N06S2-08
SPB80N06S2-08
SPI80N06S2-08
Maximum Ratings, at T
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
C
C
C
=80A, V
=80 A , V
=25°C
=25°C
=25°C
DS
DD
=44V, di/dt=200A/µs, T
® Power-Transistor
=25V, R
GS
Package
P- TO220 -3-1
P- TO263 -3-2
P- TO262 -3-1
=25Ω
1)
j
= 25 °C, unless otherwise specified
jmax
=175°C
P- TO262 -3-1
Ordering Code
Q67060-S4283
Q67060-S4284
Q67060-S7430
jmax
Page 1
2)
Symbol
I
I
E
E
dv/dt
V
P
T
D
D puls
AS
AR
GS
tot
j ,
T
P- TO263 -3-2
stg
SPP80N06S2-08,SPB80N06S2-08
Marking
2N0608
2N0608
2N0608
-55... +175
55/175/56
Product Summary
V
R
I
D
Value
DS
DS(on)
21.5
±20
320
450
215
80
80
6
P- TO220 -3-1
SPI80N06S2-08
2003-05-09
55
80
8
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A

Related parts for SPB80N06S2-08

SPB80N06S2-08 Summary of contents

Page 1

... Repetitive avalanche energy, limited by T Reverse diode dv/dt I =80A, V =44V, di/dt=200A/µ Gate source voltage Power dissipation T =25°C C Operating and storage temperature IEC climatic category; DIN IEC 68-1 SPP80N06S2-08,SPB80N06S2-08 P- TO262 -3-1 P- TO263 -3-2 Ordering Code Q67060-S4283 Q67060-S4284 Q67060-S7430 Symbol puls E AS ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) = 0.7K/W the chip is able to carry I thJC Page 2 SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 Values min. typ. max. - 0.46 0 Values min. typ. max 2 ...

Page 3

... Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge SPP80N06S2-08,SPB80N06S2-08 Symbol Conditions ≥2 DS(on)max I ...

Page 4

... D DS parameter : °C C SPP80N06S2- Drain current parameter: V SPP80N06S2- °C 190 Max. transient thermal impedance thJC parameter : K 8.5µ µ 100 µ Page 4 SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 ) ≥ 100 120 140 160 ) SPP80N06S2- 0.50 single pulse - 2003-05-09 °C 190 T C 0.20 0.10 0.05 0.02 0. ...

Page 5

... A 120 100 Typ. drain-source on resistance R DS(on) parameter Ω [V] a 4.5 b 4.8 c 5.0 d 5 5.8 g 6.0 h 6 Typ. forward transconductance g = f(I DS(on)max fs parameter Page 5 SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2- SPP80N06S2- [ 5.2 5.5 5.8 6.0 6.5 10 =25° 2003-05- 100 130 ...

Page 6

... Typ. gate threshold voltage V GS(th parameter 2.5 1.5 0.5 140 °C 100 200 Forward character. of reverse diode parameter iss 10 C oss 10 C rss Page 6 SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2- 750 µA 3 150 µ -60 - 100 ) µs p SPP80N06S2- °C typ 175 °C typ °C (98 175 °C (98%) ...

Page 7

... Drain-source breakdown voltage (BR)DSS j parameter SPP80N06S2- -60 - Typ. gate charge Ω parameter °C 125 175 T j °C 100 140 200 T j Page 7 SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 ) Gate = 80 A pulsed D SPP80N06S2-08 0 max 0 2003-05-09 DS max 120 nC Q Gate ...

Page 8

... If they fail reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N06S2-08 and BSPB80N06S2-08, for simplicity the device is referred to by the term SPP80N06S2-08 and SPB80N06S2-08 throughout this documentation. SPP80N06S2-08,SPB80N06S2-08 ...

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