SPB80N06S2L-11 Infineon Technologies, SPB80N06S2L-11 Datasheet

MOSFET N-CH 55V 80A D2PAK

SPB80N06S2L-11

Manufacturer Part Number
SPB80N06S2L-11
Description
MOSFET N-CH 55V 80A D2PAK
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of SPB80N06S2L-11

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 93µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
2650pF @ 25V
Power - Max
158W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
SP000013586
SPB80N06S2L11T

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPB80N06S2L-11
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
SPB80N06S2L-11 (2N06L11)
Manufacturer:
IDT
Quantity:
28 000
OptiMOS
Type
SPP80N06S2L-11
SPB80N06S2L-11
SPI80N06S2L-11
Maximum Ratings, at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Feature
D
S
qualified
C
C
C
C
N-Channel
=80A, V
=80 A , V
Enhancement mode
Logic Level
Automotive AEC Q101
Avalanche rated
dv/dt rated
=25°C
=100°C
=25°C
=25°C
1)
DS
DD
=44V, di/dt=200A/µs, T
=25V, R
Power-Transistor
GS
Package
P- TO220 -3-1
P- TO263 -3-2
P- TO262 -3-1
=25
j
= 25 °C, unless otherwise specified
jmax
=175°C
P- TO262 -3-1
Ordering Code
Q67060-S6035
Q67060-S6036
Q67060-S6181
jmax
Page 1
2)
Symbol
I
I
E
E
dv/dt
V
P
T
D
D puls
AS
AR
GS
tot
j ,
SPP80N06S2L-11,SPB80N06S2L-11
T
P- TO263 -3-2
stg
Marking
2N06L11
2N06L11
2N06L11
-55... +175
55/175/56
Product Summary
V
R
I
D
Value
DS
DS(on)
±20
320
280
158
80
58
16
6
SPI80N06S2L-11
P- TO220 -3-1
2004-11-02
55
11
80
Unit
A
mJ
kV/µs
V
W
°C
V
m
A

Related parts for SPB80N06S2L-11

SPB80N06S2L-11 Summary of contents

Page 1

... Repetitive avalanche energy, limited by T Reverse diode dv/dt I =80A, V =44V, di/dt=200A/µ Gate source voltage Power dissipation T =25°C C Operating and storage temperature IEC climatic category; DIN IEC 68-1 SPP80N06S2L-11,SPB80N06S2L-11 P- TO262 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6035 Q67060-S6036 Q67060-S6181 Symbol puls E AS ...

Page 2

... Current limited by bondwire ; with an R information see app.-note ANPS071E available at www.infineon.com/optimos 2 Defined by design. Not subject to production test. 3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. SPP80N06S2L-11,SPB80N06S2L-11 Symbol R thJC R ...

Page 3

... Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge SPP80N06S2L-11,SPB80N06S2L-11 Symbol Conditions DS(on)max I ...

Page 4

... Power dissipation tot C parameter SPP80N06S2L-11 170 W 140 120 100 100 120 140 160 3 Safe operating area parameter : °C C SPP80N06S2L- SPP80N06S2L-11,SPB80N06S2L-11 2 Drain current parameter: V SPP80N06S2L- °C 190 Max. transient thermal impedance thJC parameter : K 13.0µ 100 µ Page 4 SPI80N06S2L- 100 120 140 160 ...

Page 5

... SPP80N06S2L-11 190 P = 158W tot A i 160 140 120 100 Typ. transfer characteristics parameter µs p 160 A 120 100 0.5 1 1.5 2 2.5 SPP80N06S2L-11,SPB80N06S2L-11 6 Typ. drain-source on resistance R DS(on) parameter [V] a 2 3 3 Typ. forward transconductance g = f(I DS(on)max fs parameter ...

Page 6

... Typ. gate threshold voltage V GS(th parameter 1.2 0.8 0.4 140 °C 100 200 Forward character. of reverse diode parameter iss 10 C oss 10 C rss Page 6 SPI80N06S2L-11 SPP80N06S2L-11,SPB80N06S2L- 465 -60 - 100 ) µs p SPP80N06S2L- °C typ 175 °C typ °C (98 175 °C (98 0.4 0.8 1.2 1 ...

Page 7

... Drain-source breakdown voltage (BR)DSS j parameter SPP80N06S2L- -60 - Typ. gate charge parameter °C 125 145 185 T j °C 100 140 200 T j Page 7 SPI80N06S2L-11 SPP80N06S2L-11,SPB80N06S2L-11 ) Gate = 80 A pulsed D SPP80N06S2L-11 0 max 0 max 2004-11-02 80 100 nC Q Gate ...

Page 8

... If they fail reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N06S2L-11 and BSPB80N06S2L-11, for simplicity the device is referred to by the term SPP80N06S2L-11 and SPB80N06S2L-11 throughout this documentation. SPP80N06S2L-11,SPB80N06S2L-11 ...

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