SPI11N60S5 Infineon Technologies, SPI11N60S5 Datasheet
SPI11N60S5
Specifications of SPI11N60S5
SPI11N60S5
SPI11N60S5IN
SPI11N60S5X
SPI11N60S5XK
Available stocks
Related parts for SPI11N60S5
SPI11N60S5 Summary of contents
Page 1
... Operating and storage temperature Rev. 2.7 Ordering Code Q67040-S4198 Q67040-S4338 Symbol puls jmax limited jmax limited jmax tot stg Page 1 SPP11N60S5 SPI11N60S5 600 0.38 DS(on PG-TO262 PG-TO220 2 P-TO220-3-1 Marking 11N60S5 11N60S5 Value 340 0.6 11 ±20 ± 30 125 -55... +150 2009-11-30 V Ω Unit A ...
Page 2
... V =0V, V DSS DS GS =25° =150° =20V, V =0V V GSS GS DS =10V, I =7A DS(on) GS =25° =150° =1MHz, open Drain R G Page 2 SPP11N60S5 SPI11N60S5 Value Unit 20 V/ns Values Unit min. typ. max K 260 °C Values Unit min. typ. max. 600 - - V ...
Page 3
... V V d(on =6.8 Ω I =11A d(off =350V, I =11A =350V, I =11A 10V =350V, I =11A V D (plateau) DD Page 3 SPP11N60S5 SPI11N60S5 Values min. typ. max 1460 - 610 - 130 =0/10V 150 - while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V oss ...
Page 4
... GS =350V /dt=100A/µ Unit Symbol Thermal capacitance K/W C th1 C th2 C th3 C th4 C th5 C th6 th1 th th1 th2 th,n Page 4 SPP11N60S5 SPI11N60S5 Values min. typ 650 = 7.9 Value typ. 0.0001878 0.0007106 0.000988 0.002791 0.007285 0.063 E xternal H eatsink T case Unit max 1.2 V 1105 ns - µ ...
Page 5
... W 120 110 100 Transient thermal impedance thJC p parameter K Rev. 2.7 2 Safe operating area parameter : 100 120 °C 160 Typ. output characteristic parameter 0.01 single pulse - Page 5 SPP11N60S5 SPI11N60S5 ) DS =25° 0.001 0. 0 =25° µ 20V 12V 10V 2009-11- ...
Page 6
... Rev. 2.7 6 Typ. drain-source on resistance R DS(on) parameter mΩ Typ. transfer characteristics parameter: t °C 100 180 T j Page 6 SPP11N60S5 SPI11N60S5 = =150° 0 ≥ DS(on)max = 10 µ °C 150 ° 20V 12V 10V ...
Page 7
... T j (START Rev. 2.7 10 Forward characteristics of body diode parameter Gate 12 Avalanche energy E AS par =25° (START µ Page 7 SPP11N60S5 SPI11N60S5 ) µ SPP11N60S5 °C typ 150 °C typ °C (98 150 °C (98 0.4 0.8 1 350 250 200 150 100 ...
Page 8
... Rev. 2.7 14 Avalanche power losses parameter: E 300 W 200 150 100 50 0 100 °C 180 Typ oss 7.5 µJ 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 400 V 600 Page 8 SPP11N60S5 SPI11N60S5 =0.6mJ stored energy oss ) DS 100 200 300 400 2009-11- 600 V DS ...
Page 9
... Definition of diodes switching characteristics Rev. 2.7 Page 9 SPP11N60S5 SPI11N60S5 2009-11-30 ...
Page 10
... PG-TO220-3-1, PG-TO220-3-21 Rev. 2.7 Page 10 SPP11N60S5 SPI11N60S5 2009-11-30 ...
Page 11
... PG-TO262-3-1, PG-TO262-3-21 (I²-PAK) Rev. 2.7 Page 11 SPP11N60S5 SPI11N60S5 2009-11-30 ...
Page 12
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.7 Page 12 SPP11N60S5 SPI11N60S5 2009-11-30 ...