MOSFET N-CH 30V 90A TO-252

IPD03N03LB G

Manufacturer Part NumberIPD03N03LB G
DescriptionMOSFET N-CH 30V 90A TO-252
ManufacturerInfineon Technologies
SeriesOptiMOS™
IPD03N03LB G datasheet
 


Specifications of IPD03N03LB G

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs3.3 mOhm @ 60A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C90AVgs(th) (max) @ Id2V @ 70µA
Gate Charge (qg) @ Vgs40nC @ 5VInput Capacitance (ciss) @ Vds5200pF @ 15V
Power - Max115WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesIPD03N03LB G
IPD03N03LBGINTR
IPD03N03LBGXT
SP000016408
  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
Page 1/10

Download datasheet (395Kb)Embed
Next
Type
OptiMOS
®
2 Power-Transistor
Package
Marking
• Qualified according to JEDEC
• N-channel, logic level
• Excellent gate charge x R
DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
Type
IPD03N03LB G
Package
PG-TO252-3-11
Marking
03N03LB
Maximum ratings, at T
=25 °C, unless otherwise specified
j
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
4)
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev. 1.7
IPD03N03LB G
Product Summary
V
DS
R
DS(on),max
1)
for target applications
I
D
product (FOM)
IPS03N03LB G
PG-TO251-3-11
03N03LB
Symbol Conditions
2)
I
T
=25 °C
D
C
T
=100 °C
C
3)
I
T
=25 °C
D,pulse
C
=25 Ω
E
I
=90 A, R
AS
D
GS
I
=90 A, V
=20 V,
D
DS
dv /dt
di /dt =200 A/µs,
T
=175 °C
j,max
V
GS
P
T
=25 °C
tot
C
T
, T
j
stg
page 1
IPS03N03LB G
30
V
3.3
mΩ
90
A
Value
Unit
90
A
90
360
240
mJ
6
kV/µs
±20
V
115
W
-55 ... 175
°C
55/175/56
2008-04-11

IPD03N03LB G Summary of contents

  • Page 1

    ... Continuous drain current Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt 4) Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.7 IPD03N03LB G Product Summary DS(on),max 1) for target applications I D product (FOM) ...

  • Page 2

    ... Current is limited by bondwire; with See figure =150 °C and duty cycle D <0.25 for V j,max 5) Device 1.5 mm epoxy PCB FR4 with 6 cm connection. PCB is vertical in still air. Rev. 1.7 IPD03N03LB G Symbol Conditions R thJC R minimal footprint thJA cooling area =25 °C, unless otherwise specified ...

  • Page 3

    ... Symbol Conditions C iss = oss f =1 MHz C rss t d( =2.7 Ω d(off g( plateau V =0 g(sync = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPD03N03LB G IPS03N03LB G Values Unit min. typ. max. - 3900 5200 pF - 1400 1900 - 180 270 - 6 6.3 8 420 - 0.92 1 2008-04-11 ...

  • Page 4

    ... Drain current I =f 100 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 1 100 µ 0 0.01 0.001 0 10 100 10 [V] DS page 4 IPD03N03LB G IPS03N03LB G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse [s] p 200 1 -1 ...

  • Page 5

    ... V Rev. 1.7 6 Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f 180 160 140 120 100 ° [V] GS page 5 IPD03N03LB G IPS03N03LB =25 ° 3.2 V 3.5 V 3.8 V 4 [A] D =25 ° [ 100 100 2008-04-11 ...

  • Page 6

    ... Forward characteristics of reverse diode I =f parameter: T 1000 100 10 Crss 0.0 [V] DS page 6 IPD03N03LB G IPS03N03LB 700 µA 70 µA - 100 140 T [° °C, 98% 175 °C, 98% 25 °C 175 °C 0.5 1.0 1.5 V [V] SD 180 2.0 2008-04-11 ...

  • Page 7

    ... T j(start) 100 150 ° Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 1.7 14 Typ. gate charge V =f(Q GS parameter °C 10 100 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPD03N03LB G IPS03N03LB =45 A pulsed gate [nC] gate ate 2008-04-11 ...

  • Page 8

    ... Package Outline PG-TO252-3-11: Outline Rev. 1.7 IPD03N03LB G PG-TO252-3-11 page 8 IPS03N03LB G 2008-04-11 ...

  • Page 9

    ... Package Outline Rev. 1.7 IPD03N03LB G PG-TO251-3-11 page 9 IPS03N03LB G 2008-04-11 ...

  • Page 10

    ... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.7 IPD03N03LB G page 10 IPS03N03LB G 2008-04-11 ...