NTB30N20 ON Semiconductor, NTB30N20 Datasheet

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NTB30N20

Manufacturer Part Number
NTB30N20
Description
MOSFET N-CH 200V 30A D2PAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTB30N20

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
81 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
2335pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTB30N20
Manufacturer:
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Quantity:
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NTB30N20
Power MOSFET
30 Amps, 200 Volts
N−Channel Enhancement−Mode D
Features
Typical Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
2. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 4
Drain−to−Source Voltage
Drain−to−Source Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Derate above 25°C
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Drain−to−Source Avalanche Energy,
Starting T
(V
I
Thermal Resistance
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
L
Fast Recovery Diode
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Avalanche Energy Specified
I
Mounting Information Provided for the D
Pb−Free Packages are Available
PWM Motor Controls
Power Supplies
Converters
(pk) = 20 A, L = 3.0 mH, R
pad size, (Cu Area 0.412 in
DD
DSS
= 100 Vdc, V
and R
J
− Continuous
− Non−Repetitive (t
= 25°C
DS(on)
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)
− Continuous @ T
− Continuous @ T
− Pulsed (Note 2)
GS
Rating
Specified at Elevated Temperature
= 10 Vdc,
(T
C
= 25°C unless otherwise noted)
GS
G
A
A
2
p
= 25°C
= 25°C (Note 1)
= 25 W)
).
v10 ms)
= 1.0 MW)
A
A
100°C
25°C
2
PAK Package
Symbol
T
V
V
V
R
R
R
J
V
E
I
GSM
P
P
, T
DSS
DGR
T
I
I
DM
qJC
qJA
qJA
GS
AS
D
D
D
D
L
stg
−55 to
Value
+175
"30
"40
1.43
62.5
2
200
200
214
450
260
2.0
0.7
30
22
90
50
PAK
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Adc
mJ
°C
°C
W
W
NTB30N20
NTB30N20G
NTB30N20T4
NTB30N20T4G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
200 V
Device
V
CASE 418B
DSS
2
STYLE 2
D
3
30N20
A
Y
WW
G
ORDERING INFORMATION
2
PAK
G
http://onsemi.com
68 mW @ V
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
N−Channel
R
(Pb−Free)
(Pb−Free)
4
Package
D
D
D
D
DS(ON)
2
2
2
2
D
PAK
PAK
PAK
PAK
Publication Order Number:
MARKING DIAGRAM
& PIN ASSIGNMENT
GS
S
Gate
TYP
= 10 V
1
30N20G
AYWW
800 Tape & Reel
800 Tape & Reel
Drain
Drain
50 Units/Rail
50 Units/Rail
4
2
Shipping
NTB30N20/D
I
D
30 A
3
Source
MAX

Related parts for NTB30N20

NTB30N20 Summary of contents

Page 1

... Device R 62.5 qJA 50 R NTB30N20 qJA °C NTB30N20G T 260 L NTB30N20T4 NTB30N20T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R TYP I MAX DSS DS(ON ...

Page 2

... Fall Time Gate Charge BODY−DRAIN DIODE RATINGS (Note 3) Forward On−Voltage (I S Reverse Recovery Time Reverse Recovery Stored Charge 3. Indicates Pulse Test 300 ms max, Duty Cycle = 2%. 4. Switching characteristics are independent of operating junction temperature. NTB30N20 (T = 25°C unless otherwise noted Adc Vdc Vdc ...

Page 3

... I , DRAIN CURRENT (AMPS) D Figure 3. On−Resistance versus Drain Current and Temperature 2.5 2 1.5 1 0.5 0 −50 − 100 T , JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTB30N20 60 ≥ 25° 100° GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 2. Transfer Characteristics 0 25° ...

Page 4

... GG GSP 6000 5000 4000 3000 2000 1000 NTB30N20 POWER MOSFET SWITCHING The capacitance (C a voltage corresponding to the off−state condition when calculating t on−state when calculating t At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring ...

Page 5

... In addition the total transition time ( power averaged over a complete switching cycle must not exceed (T − T )/(R ). qJC J(MAX Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For NTB30N20 180 1000 150 120 100 V GS ...

Page 6

... DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 Figure 14. Diode Reverse Recovery Waveform NTB30N20 SAFE OPERATING AREA 500 400 10 ms 300 100 200 100 0 100 1000 STARTING JUNCTION TEMPERATURE (° ...

Page 7

... PL 0.13 (0.005 VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTB30N20 PACKAGE DIMENSIONS 2 D PAK CASE 418B−04 ISSUE ...

Page 8

... USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTB30N20/D ...

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