NTHD5904NT3 ON Semiconductor, NTHD5904NT3 Datasheet

no-image

NTHD5904NT3

Manufacturer Part Number
NTHD5904NT3
Description
MOSFET N-CH 20V 2.5A CHIPFET
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTHD5904NT3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
65 mOhm @ 3.3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
465pF @ 16V
Power - Max
640mW
Mounting Type
Surface Mount
Package / Case
8-ChipFET™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
NTHD5904N
Power MOSFET
20 V, 4.5 A, Dual N−Channel, ChipFETt
Features
Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
2. Surface Mounted on FR4 Board using the minimum recommended pad size
3. ESD Rating Information: Human Body Model (HBM) Class 0.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 2
MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – t ≤ 5 s (Note 1)
Junction−to−Ambient – Steady State (Note 2)
Ideal Device for Applications Where Board Space is at a Premium.
Applications Where Heat Transfer is Required.
Computing and Portable Equipment
Low R
Leadless ChipFET Package has 40% Smaller Footprint than TSOP−6.
ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal for
Pb−Free Packages are Available
DC−DC Buck or Boost Converters
Low Side Switching
Optimized for Battery and Low Side Switching Applications in
[1 oz] including traces).
(Cu area = 0.214 in sq).
DS(on)
and Fast Switching Speed
Parameter
Parameter
(T
Steady
Steady
Steady
J
t ≤ 5 s
t
State
State
State
p
= 25°C unless otherwise noted)
=10 ms
T
T
T
T
T
T
T
A
A
A
A
A
A
A
=25°C
=85°C
=25°C
=25°C
=25°C
=85°C
=25°C
Symbol
Symbol
V
T
R
R
R
V
I
T
P
P
DSS
STG
T
I
I
DM
I
qJA
qJA
qJA
GS
D
D
S
J
D
D
L
,
−55 to
Value
±8.0
1.13
0.64
Max
150
260
195
110
3.3
2.4
4.5
2.5
1.8
2.6
20
10
60
1
°C/W
Unit
Unit
°C
°C
W
W
V
V
A
A
A
A
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
D
D
D
D
V
CONNECTIONS
1
1
2
2
(BR)DSS
20 V
8
7
6
5
G
PIN
ORDERING INFORMATION
1
D3 = Specific Device Code
M
G
, G
2
http://onsemi.com
N−Channel MOSFET
= Month Code
= Pb−Free Package
1
2
3
4
40 mW @ 4.5 V
55 mW @ 2.5 V
R
S
G
S
G
D
DS(on)
1
2
1
2
1
, D
Publication Order Number:
2
TYP
1
2
3
4
CASE 1206A
S
MARKING
DIAGRAM
(Top View)
ChipFET
1
STYLE 2
, S
NTHD5904N/D
2
I
D
4.5 A
MAX
8
7
6
5

Related parts for NTHD5904NT3

NTHD5904NT3 Summary of contents

Page 1

NTHD5904N Power MOSFET 20 V, 4.5 A, Dual N−Channel, ChipFETt Features • Low R and Fast Switching Speed DS(on) • Leadless ChipFET Package has 40% Smaller Footprint than TSOP−6. Ideal Device for Applications Where Board Space Premium. ...

Page 2

... Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTHD5904NT1 NTHD5904NT1G NTHD5904NT3 NTHD5904NT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTHD5904N (T = 25°C unless otherwise noted) ...

Page 3

TYPICAL PERFORMANCE CURVES 2 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS ...

Page 4

TYPICAL PERFORMANCE CURVES 1200 iss 1000 800 600 400 200 C oss C rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure ...

Page 5

... SCALE 20:1 0.026 Basic *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTHD5904N PACKAGE DIMENSIONS ChipFET] CASE 1206A−03 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...

Page 6

... Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NTHD5904N N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: http://onsemi ...

Related keywords