MOSFET N-CH 40V 76A DPAK

 

NTD5803NT4G

Manufacturer Part NumberNTD5803NT4G
DescriptionMOSFET N-CH 40V 76A DPAK
ManufacturerON Semiconductor
NTD5803NT4G datasheets

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NTD5803NT4G cross reference pin-to-pin replacement

Part numberManufacturerVdsIdPackageConfigurationDatasheet
AP9412GH  AP9412GH Advanced Power Electronics Corp. 30V 73A TO-252 Single N AP9412GH.pdf
AP0603GH-HF  AP0603GH-HF Advanced Power Electronics Corp. 30V 72A TO-252 Single N AP0603GH-HF.pdf
AP83T03GJ-HF  AP83T03GJ-HF Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP83T03GH-HF.pdf
AP73T03GH-HF  AP73T03GH-HF Advanced Power Electronics Corp. 30V 55A TO-252 Single N AP73T03GJ-HF.pdf
AP9430GH-HF  AP9430GH-HF Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP9430GH-HF.pdf
AP90T03GH  AP90T03GH Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP90T03GH.pdf
AP2R803GH  AP2R803GH Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP2R803GH.pdf
AP70T03AH  AP70T03AH Advanced Power Electronics Corp. 30V 60A TO-252 Single N AP70T03AH.pdf
AP9412AGH  AP9412AGH Advanced Power Electronics Corp. 30V 68A TO-252 Single N AP9412AGH.pdf
AP9408GH  AP9408GH Advanced Power Electronics Corp. 30V 57A TO-252 Single N AP9408GH.pdf
AP9468GH  AP9468GH Advanced Power Electronics Corp. 40V 75A TO-252 Single N AP9468GH.pdf
AP0504GH-HF  AP0504GH-HF Advanced Power Electronics Corp. 40V 66A TO-252 Single N AP0504GH-HF.pdf
AP83T03GH-HF  AP83T03GH-HF Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP83T03GH-HF.pdf
AP85T03GH  AP85T03GH Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP85T03GH.pdf
AP86T03GH  AP86T03GH Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP86T03GH.pdf
AP92U03GH-HF  AP92U03GH-HF Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP92U03GH-HF.pdf
AP62T03GH  AP62T03GH Advanced Power Electronics Corp. 30V 54A TO-252 Single N AP62T03GH.pdf
AP9410GH-HF  AP9410GH-HF Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP9410GH-HF.pdf
AP9410AGH-HF  AP9410AGH-HF Advanced Power Electronics Corp. 30V 67A TO-252 Single N AP9410AGH-HF.pdf
AP85U03GH-HF  AP85U03GH-HF Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP85U03GH-HF.pdf
AP92T03GH  AP92T03GH Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP92T03GH.pdf
AP3R604GH  AP3R604GH Advanced Power Electronics Corp. 40V 75A TO-252 Single N AP3R604GH.pdf
AP0403GH-HF  AP0403GH-HF Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP0403GH-HF.pdf
AP70T03GH  AP70T03GH Advanced Power Electronics Corp. 30V 60A TO-252 Single N AP70T03GH.pdf
AP0403GH  AP0403GH Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP0403GH.pdf
AP72T03GH  AP72T03GH Advanced Power Electronics Corp. 30V 62A TO-252 Single N AP72T03GH.pdf
AP3R604AGH-HF  AP3R604AGH-HF Advanced Power Electronics Corp. 40V 75A TO-252 Single N AP3R604AGH-HF.pdf
AP60N03GH  AP60N03GH Advanced Power Electronics Corp. 30V 55A TO-252 Single N AP60N03GH.pdf
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Specifications of NTD5803NT4G

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs7.2 mOhm @ 50A, 10VDrain To Source Voltage (vdss)40V
Current - Continuous Drain (id) @ 25° C76AVgs(th) (max) @ Id3.5V @ 250µA
Gate Charge (qg) @ Vgs51nC @ 10VInput Capacitance (ciss) @ Vds3220pF @ 25V
Power - Max83WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.0072 Ohms
Drain-source Breakdown Voltage40 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current76 APower Dissipation83 W
Maximum Operating Temperature+ 175 CMounting StyleSMD/SMT
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
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NTD5803N
Power MOSFET
40 V, 76 A, Single N−Channel, DPAK/IPAK
Features
•
Low R
DS(on)
•
High Current Capability
•
Avalanche Energy Specified
•
These are Pb−Free Devices
Applications
•
CCFL Backlight
•
DC Motor Control
•
Class D Amplifier
•
Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS
(T
= 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage
− Non−Repetitive (t
< 10 mS)
p
Continuous Drain
T
= 25°C
C
Current (R
)
qJC
Steady
T
= 100°C
(Note 1)
C
State
Power Dissipation
T
= 25°C
C
(R
) (Note 1)
qJC
Pulsed Drain Current
t
= 10 ms
p
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V
= 50 V, V
= 10 V, R
= 25 W,
DD
GS
G
I
= 40 A, L = 0.3 mH)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient − Steady State (Note 1)
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
© Semiconductor Components Industries, LLC, 2011
March, 2011 − Rev. 3
V
(BR)DSS
40 V
Symbol
Value
Unit
V
40
V
DSS
V
V
"20
GS
V
"30
V
GS
I
76
A
D
54
P
83
W
D
I
228
A
DM
(Surface Mount)
T
, T
−55 to
°C
J
stg
175
I
76
A
S
E
240
mJ
AS
T
260
°C
L
Symbol
Value
Unit
R
1.8
°C/W
qJC
R
64
qJA
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1
http://onsemi.com
R
MAX
I
MAX
DS(on)
D
10.1 mW @ 5.0 V
54 A
7.2 mW @ 10 V
76 A
D
G
S
N−CHANNEL MOSFET
4
4
1 2
3
1
2
3
DPAK
IPAK
CASE 369AA
CASE 369D
(Straight Lead
STYLE 2
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
4
Drain
2
Drain 3
1
Gate
Source
1
2
3
Gate
Drain
Source
Y
= Year
WW
= Work Week
5803N = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
Publication Order Number:
NTD5803N/D

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NTD5803NT4G Summary of contents

  • Page 1

    NTD5803N Power MOSFET Single N−Channel, DPAK/IPAK Features • Low R DS(on) • High Current Capability • Avalanche Energy Specified • These are Pb−Free Devices Applications • CCFL Backlight • DC Motor Control • Class D Amplifier ...

  • Page 2

    ... Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Order Number NTD5803NG NTD5803NT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted) ...

  • Page 3

    TYPICAL PERFORMANCE CHARACTERISTICS 160 T = 25° 140 120 100 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.012 0.010 0.008 ...

  • Page 4

    TYPICAL PERFORMANCE CHARACTERISTICS 8000 7000 6000 5000 C iss 4000 3000 2000 C C oss rss 1000 Vgs Vds GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 ...

  • Page 5

    TYPICAL PERFORMANCE CHARACTERISTICS 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 t, PULSE TIME (s) Figure 12. Thermal Response http://onsemi.com 5 0.1 1 ...

  • Page 6

    ... DETAIL 0.005 (0.13 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA−01 ISSUE GAUGE SEATING L2 C PLANE PLANE DETAIL A ROTATED 90 CW ...

  • Page 7

    ... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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