IPB08CN10N G Infineon Technologies, IPB08CN10N G Datasheet

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IPB08CN10N G

Manufacturer Part Number
IPB08CN10N G
Description
MOSFET N-CH 100V 95A TO263-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPB08CN10N G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.2 mOhm @ 95A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
95A
Vgs(th) (max) @ Id
4V @ 130µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
6660pF @ 50V
Power - Max
167W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
6.1mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000096448
Rev. 1.08
Features
• N-channel, normal level
• Excellent gate charge x R
• Very low on-resistance R
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
Package
Marking
2 Power-Transistor
IPB08CN10N G
PG-TO263-3
08CN10N
2)
3)
j
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
product (FOM)
for target application
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
IPI08CN10N G
PG-TO262-3
08CN10N
stg
T
T
T
I
I
di /dt =100 A/µs,
T
T
D
D
page 1
C
C
C
j,max
C
=95 A, R
=95 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=175 °C
DS
GS
=80 V,
=25 Ω
Product Summary
V
R
I
IPP08CN10N G
PG-TO220-3
08CN10N
D
DS
DS(on),max (TO263)
IPI08CN10N G
-55 ... 175
55/175/56
Value
380
262
±20
167
95
68
6
IPB08CN10N G
IPP08CN10N G
100
8.2
95
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A
2010-04-26

Related parts for IPB08CN10N G

IPB08CN10N G Summary of contents

Page 1

... Symbol Conditions I T =25 ° =100 ° =25 °C D,pulse C =25 Ω = = = /dt di /dt =100 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPB08CN10N G IPI08CN10N G IPP08CN10N G 100 V 8.2 mΩ Value Unit 380 262 mJ 6 kV/µs ±20 V 167 W -55 ... 175 °C 55/175/56 2010-04-26 ...

Page 2

... GS I DSS T =25 ° =100 =125 ° = GSS = = DS(on) (TO263 (TO220, TO262 |>2 DS(on)max = <- (one layer, 70 µm thick) copper area for drain page 2 IPB08CN10N G IPI08CN10N G IPP08CN10N G Values min. typ. max 0 100 - - 0 100 - 1 100 - 6.1 8.2 - 6.4 8 113 - Unit K/W V µA nA mΩ ...

Page 3

... Rev. 1.08 Symbol Conditions C iss = oss f =1 MHz C rss t d( =1.6 Ω I =47 d(off = = plateau oss =25 ° S,pulse = =25 ° = /dt =100 A/µ page 3 IPB08CN10N G IPI08CN10N G IPP08CN10N G Values Unit min. typ. max. - 5010 6660 pF - 757 1010 - 100 - 5 106 380 - 1 1 105 ns - 270 - nC 2010-04-26 ...

Page 4

... Rev. 1.08 2 Drain current I =f 100 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 100 µ [V] DS page 4 IPB08CN10N G IPI08CN10N G IPP08CN10N G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 200 0 10 2010-04-26 ...

Page 5

... DS D DS(on)max parameter 200 150 100 Rev. 1.08 6 Typ. drain-source on resistance R =f(I DS(on) parameter 6 [ Typ. forward transconductance g =f 160 140 120 100 80 175 ° ° [V] GS page 5 IPB08CN10N G IPI08CN10N G IPP08CN10N =25 ° 4 5 100 I [A] D =25 ° 120 I [A] D 150 160 2010-04-26 ...

Page 6

... GS(th) parameter 3.5 3 2.5 2 typ 1 100 140 180 -60 [° Forward characteristics of reverse diode I =f parameter [V] DS page 6 IPB08CN10N G IPI08CN10N G IPP08CN10N 1300 µA 130 µA - 100 140 T [° 175 °C, 98% 175 °C 25 °C 25 °C, 98% 0.5 1 1.5 V [V] SD 180 2 2010-04-26 ...

Page 7

... Drain-source breakdown voltage V =f BR(DSS 115 110 105 100 95 90 -60 - Rev. 1.08 14 Typ. gate charge V =f(Q GS parameter °C 100 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPB08CN10N G IPI08CN10N G IPP08CN10N =95 A pulsed gate [nC] gate ate 2010-04-26 ...

Page 8

... PG-TO220-3: Outline Rev. 1.08 IPI08CN10N G page 8 IPB08CN10N G IPP08CN10N G 2010-04-26 ...

Page 9

... PG-TO262-3-1 (I²PAK) Rev. 1.08 IPI08CN10N G page 9 IPB08CN10N G IPP08CN10N G 2010-04-26 ...

Page 10

... PG-TO-263 (D²-Pak) Rev. 1.08 IPI08CN10N G page 10 IPB08CN10N G IPP08CN10N G 2010-04-26 ...

Page 11

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.08 IPI08CN10N G page 11 IPB08CN10N G IPP08CN10N G 2010-04-26 ...

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