DIODE SCHOTTKY RF CA 15V SOT-23

 

HSMS-2823-BLKG

Manufacturer Part NumberHSMS-2823-BLKG
DescriptionDIODE SCHOTTKY RF CA 15V SOT-23
ManufacturerAvago Technologies US Inc.
HSMS-2823-BLKG datasheets

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Specifications of HSMS-2823-BLKG

Diode TypeSchottky - 1 Pair Common AnodeVoltage - Peak Reverse (max)15V
Current - Max1ACapacitance @ Vr, F1pF @ 0V, 1MHz
Resistance @ If, F12 Ohm @ 5mA, 1MHzPackage / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Diode Case StyleSOT-23No. Of Pins3
Pin ConfigurationCommon AnodeTermination TypeSMD
Breakdown Voltage Min15VForward Voltage340mV
Mounting TypeSurface MountFilter TerminalsSMD
Rohs CompliantYesCapacitance1pF
Leaded Process CompatibleYesDiode ConfigurationDual Common Anode
Forward Current If Max10mACapacitance Ct1pF
Lead Free Status / RoHS StatusLead free / RoHS CompliantPower Dissipation (max)-
Other names516-1924
HSMS-2823-BLKG
  
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Quad Capacitance
Capacitance of Schottky diode quads is measured using
an HP4271 LCR meter. This instrument effectively isolates
individual diode branches from the others, allowing ac‑
curate capacitance measurement of each branch or each
diode. The conditions are: 20 mV R.M.S. voltage at 1 MHz.
Avago defines this measurement as “CM”, and it is equiva‑
lent to the capacitance of the diode by itself. The equiva‑
lent diagonal and adjacent capaci‑tances can then be cal‑
culated by the formulas given below.
In a quad, the diagonal capacitance is the capacitance be‑
tween points A and B as shown in the figure below. The
diagonal capacitance is calculated using the following
formula
C
x C
C
x C
1
2
3
4
C
= _______ + _______
DIAGONAL
C
+ C
C
+ C
1
2
3
4
The equivalent adjacent capacitance is the capacitance
C
x C
C
x C
1
2
3
4
C
= _______ + _______
1
DIAGONAL
between points A and C in the figure below. This capaci‑
C
= C
+ ____________
C
+ C
C
+ C
ADJACENT
1
tance is calculated using the following formula
1
2
3
4
1
1
1
–– + –– + ––
1
C
C
C
C
= C
+ ____________
2
3
4
ADJACENT
1
1
1
1
–– + –– + ––
-5
8.33 X 10
nT
R
=
C
C
C
j
I
+ I
2
3
4
b
s
This information does not apply to cross‑over quad di‑
-5
8.33 X 10
nT
R
=
j
odes.
I
+ I
b
s
A
C
C
1
3
C
C
C
2
4
B
3
Linear Equivalent Circuit Model Diode Chip
R
j
R
S
C
j
R
= series resistance (see Table of SPICE parameters)
S
C
= junction capacitance (see Table of SPICE parameters)
j
-5
8.33 X 10
nT
R
=
j
I
+ I
b
s
where
I
= externally applied bias current in amps
b
I
= saturation current (see table of SPICE parameters)
s
T = temperature, °K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-282x product,
please refer to Application Note AN1124.
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
SPICE Parameters
Parameter
Units
HSMS-282x
B
V
15
V
C
pF
0.7
J0
E
eV
0.69
G
I
A
1E‑4
BV
I
A
2.2E‑8
S
N
1.08
R
Ω
6.0
S
P
V
0.65
B
P
2
T
M
0.5