MBD301G | |
|---|---|
| Manufacturer Part Number | MBD301G |
| Description | DIODE SCHOTTKY DET/SW 30V TO92-2 |
| Manufacturer | ON Semiconductor |
| MBD301G datasheets |
|
Availability: In stock
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
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Shipping terms
- Standard delivery time differs from 5-8 business days if the supplier is a local one to 12-14 days if the suplier is from overseas. If delivery time differs it's always mentioned in our quotation.
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Specifications of MBD301G | |||
|---|---|---|---|
| Diode Type | Schottky - Single | Voltage - Peak Reverse (max) | 30V |
| Capacitance @ Vr, F | 1.5pF @ 15V, 1MHz | Power Dissipation (max) | 280mW |
| Package / Case | TO-92-2, TO-226AC | Product | Schottky Diodes |
| Peak Reverse Voltage | 30 V | Configuration | Single |
| Forward Voltage Drop | 0.6 V @ 0.01 A | Maximum Reverse Leakage Current | 0.2 uA @ 25 V |
| Operating Temperature Range | - 55 C to + 150 C | Mounting Style | Through Hole |
| Package Type | TO-92 (TO-226AC) | Power Dissipation | 280 mW |
| Primary Type | Schottky Barrier | Temperature, Junction, Maximum | +125 °C |
| Temperature, Operating | -55 to +125 °C | Voltage, Forward | 0.52 V |
| Voltage, Reverse | 30 V | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Current - Max | - | Resistance @ If, F | - |
| Other names | MBD301GOS | ||
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MBD301G, MMBD301LT1G
Silicon Hot-Carrier Diodes
SCHOTTKY Barrier Diodes
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Features
•
Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
•
Very Low Capacitance − 1.5 pF (Max) @ V
•
Low Reverse Leakage − I
= 13 nAdc (Typ) MBD301, MMBD301
R
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Reverse Voltage
V
R
Total Device Dissipation
P
F
@ T
= 25°C
A
Derate above 25°C
Operating Junction
T
J
Temperature Range
Storage Temperature Range
T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
= 15 V
R
MBD301
MMBD301LT1
Value
Unit
30
V
280
200
mW
2.8
2.0
mW/°C
−55 to +125
°C
−55 to +150
°C
1
http://onsemi.com
30 VOLTS
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
MBD301
MARKING
DIAGRAM
TO−92
(TO−226AC)
CASE 182
AYWWG
STYLE 1
1
2
A
= Assembly Location
Y
= Year
WW
= Work Week
= Pb−Free Package
G
(Note: Microdot may be in either location)
2
1
CATHODE
ANODE
MMBD301LT1
MARKING
DIAGRAM
3
SOT−23
4T M G
(TO−236)
CASE 318
1
STYLE 8
2
1
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
3
1
CATHODE
ANODE
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MBD301/D
MBD
301
G
G
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MBD301G Summary of contents |
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