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MBD330DWT1G
MBD330DWT1G | |
|---|---|
| Manufacturer Part Number | MBD330DWT1G |
| Description | DIODE SCHOTTKY DUAL 30V SOT-363 |
| Manufacturer | ON Semiconductor |
| MBD330DWT1G datasheets |
|
Availability: In stock
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
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Shipping terms
- Standard delivery time differs from 5-8 business days if the supplier is a local one to 12-14 days if the suplier is from overseas. If delivery time differs it's always mentioned in our quotation.
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- For new client payment term is payment in advance. At this moment we accept 3 payment methods: wire transfer, PayPal and Western Union. Credit card payment is under constrution and will be introduced soon. Escrow service is acceptable. Net terms for regular customers is not a problem. Working with us is totally safe for you.
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Specifications of MBD330DWT1G | |||
|---|---|---|---|
| Diode Type | Schottky - 2 Independent | Voltage - Peak Reverse (max) | 30V |
| Capacitance @ Vr, F | 1.5pF @ 15V, 1MHz | Power Dissipation (max) | 120mW |
| Package / Case | SC-70-6, SC-88, SOT-363 | Product | Schottky Diodes |
| Peak Reverse Voltage | 30 V | Forward Continuous Current | 0.01 A |
| Configuration | Dual Anti Parallel | Forward Voltage Drop | 0.6 V @ 0.01 A |
| Maximum Reverse Leakage Current | 0.2 uA @ 25 V | Operating Temperature Range | - 55 C to + 125 C |
| Mounting Style | SMD/SMT | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Current - Max | - | Resistance @ If, F | - |
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MBD110DWT1G,
MBD330DWT1G,
MBD770DWT1G
Preferred Device
Dual Schottky Barrier
Diodes
Application circuit designs are moving toward the consolidation of
device count and into smaller packages. The new SOT−363 package is
a solution which simplifies circuit design, reduces device count, and
reduces board space by putting two discrete devices in one small
six−leaded package. The SOT−363 is ideal for low−power surface
mount applications where board space is at a premium, such as
portable products.
Surface Mount Comparisons:
SOT−363
2
Area (mm
)
Max Package P
(mW)
D
Device Count
Space Savings:
Package
1 SOT−23
SOT−363
40%
The MBD110DW, MBD330DW, and MBD770DW devices are
spin−offs of our popular MMBD101LT1, MMBD301LT1, and
MMBD701LT1 SOT−23 devices. They are designed for
high−efficiency UHF and VHF detector applications. Readily
available to many other fast switching RF and digital applications.
Features
•
Extremely Low Minority Carrier Lifetime
•
Very Low Capacitance
•
Low Reverse Leakage
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Reverse Voltage
MBD110DWT1G
MBD330DWT1G
MBD770DWT1G
Forward Power Dissipation T
= 25°C
A
Junction Temperature
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 6
SOT−23
4.6
7.6
120
225
2
1
2 SOT−23
70%
Symbol
Value
Unit
V
7.0
V
R
30
70
P
120
mW
F
T
−55 to +125
°C
J
T
−55 to +150
°C
stg
1
http://onsemi.com
Anode 1
6 Cathode
N/C 2
5 N/C
Cathode 3
4 Anode
1
SC−88 / SOT−363
CASE 419B
STYLE 6
MARKING DIAGRAM
6
xx M G
G
1
xx
= Device Code
Refer to Ordering Table,
page 2
M
= Date Code
= Pb−Free Package
G
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MBD110DWT1/D
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MBD330DWT1G Summary of contents |
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