DIODE SCHOTTKY DUAL 30V SOT-363

 

MBD330DWT1G

Manufacturer Part NumberMBD330DWT1G
DescriptionDIODE SCHOTTKY DUAL 30V SOT-363
ManufacturerON Semiconductor
MBD330DWT1G datasheets

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Specifications of MBD330DWT1G

Diode TypeSchottky - 2 IndependentVoltage - Peak Reverse (max)30V
Capacitance @ Vr, F1.5pF @ 15V, 1MHzPower Dissipation (max)120mW
Package / CaseSC-70-6, SC-88, SOT-363ProductSchottky Diodes
Peak Reverse Voltage30 VForward Continuous Current0.01 A
ConfigurationDual Anti ParallelForward Voltage Drop0.6 V @ 0.01 A
Maximum Reverse Leakage Current0.2 uA @ 25 VOperating Temperature Range- 55 C to + 125 C
Mounting StyleSMD/SMTLead Free Status / RoHS StatusLead free / RoHS Compliant
Current - Max-Resistance @ If, F-
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ELECTRICAL CHARACTERISTICS
Characteristic
Reverse Breakdown Voltage
(I
= 10 mA)
R
Diode Capacitance
(V
= 0, f = 1.0 MHz, Note 1)
R
Total Capacitance
(V
= 15 Volts, f = 1.0 MHz)
R
(V
= 20 Volts, f = 1.0 MHz)
R
Reverse Leakage
(V
= 3.0 V)
R
(V
= 25 V)
R
(V
= 35 V)
R
Noise Figure
(f = 1.0 GHz, Note 2)
Forward Voltage
(I
= 10 mA)
F
(I
= 1.0 mA)
F
(I
= 10 mA)
F
(I
= 1.0 mA)
F
(I
= 10 mA)
F
ORDERING INFORMATION
Device
MBD110DWT1G
MBD330DWT1G
MBD770DWT1G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
(T
= 25°C unless otherwise noted)
A
Symbol
V
MBD110DWT1G
MBD330DWT1G
MBD770DWT1G
MBD110DWT1G
MBD330DWT1G
MBD770DWT1G
MBD110DWT1G
MBD330DWT1G
MBD770DWT1G
MBD110DWT1G
MBD110DWT1G
MBD330DWT1G
MBD770DWT1G
Marking
Package
SC−88 / SOT−363
(Pb−Free)
M4
SC−88 / SOT−363
(Pb−Free)
T4
SC−88 / SOT−363
(Pb−Free)
H5
http://onsemi.com
2
Min
Typ
Max
(BR)R
7.0
10
−
30
−
−
70
−
−
C
D
−
0.88
1.0
C
T
−
0.9
1.5
−
0.5
1.0
I
R
−
0.02
0.25
−
13
200
−
9.0
200
NF
−
6.0
−
V
F
−
0.5
0.6
−
0.38
0.45
−
0.52
0.6
−
0.42
0.5
−
0.7
1.0
†
Shipping
3000 Units / Tape & Reel
Unit
V
pF
pF
mA
nA
nA
dB
V

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