BAR 90-02LRH E6327

Manufacturer Part NumberBAR 90-02LRH E6327
DescriptionDIODE PIN SGL 80V 100MA TSLP-2-7
ManufacturerInfineon Technologies
BAR 90-02LRH E6327 datasheets

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Specifications of BAR 90-02LRH E6327

Package / CaseTSLP-2-7Diode TypePIN - Single
Voltage - Peak Reverse (max)80VCurrent - Max100mA
Capacitance @ Vr, F0.35pF @ 1V, 1MHzResistance @ If, F800 mOhm @ 10mA, 100MHz
Power Dissipation (max)250mWConfigurationSingle
Reverse Voltage80 VForward Continuous Current100 mA
Frequency RangeUHFCarrier Life0.75 us
Forward Voltage Drop1 VMaximum Diode Capacitance0.35 pF at 1 V
Maximum Operating Temperature+ 125 CMaximum Series Resistance @ Maximum If2.3 Ohms at 3 mA
Maximum Series Resistance @ Minimum If2 Ohms at 1 mAMinimum Operating Temperature- 55 C
Mounting StyleSMD/SMTPower Dissipation250 mW
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesBAR9002LRHE6327XT
SP000051045
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Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office ( <www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
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Life support devices or systems are intended to be implanted in the human body or
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2010-03-05
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