BAR 90-02LS E6327

Manufacturer Part NumberBAR 90-02LS E6327
DescriptionDIODE PIN SGL 80V 100MA TSSLP-2
ManufacturerInfineon Technologies
BAR 90-02LS E6327 datasheets

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Specifications of BAR 90-02LS E6327

Package / CaseTSSLP-2Diode TypePIN - Single
Voltage - Peak Reverse (max)80VCurrent - Max100mA
Capacitance @ Vr, F0.35pF @ 1V, 1MHzResistance @ If, F800 mOhm @ 10mA, 100MHz
Power Dissipation (max)150mWConfigurationSingle
Reverse Voltage80 VForward Continuous Current100 mA
Frequency RangeUHFCarrier Life0.75 us
Forward Voltage Drop1 VMaximum Diode Capacitance0.35 pF at 1 V
Maximum Operating Temperature+ 125 CMaximum Series Resistance @ Maximum If2.3 Ohms at 3 mA
Maximum Series Resistance @ Minimum If2 Ohms at 1 mAMinimum Operating Temperature- 55 C
Mounting StyleSMD/SMTPower Dissipation150 mW
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesBAR9002LSE6327XT
SP000200323
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Silicon Deep Trench PIN Diodes
• Optimized for low bias current antenna
switches in hand held applications
• Very low capacitance at zero volt
reverse bias at frequencies
above 1GHz (typ. 0.19 pF)
• Low forward resistance
(typ. 1.3 Ω @ I
= 3 mA)
F
• Improved ON / OFF mode harmonic
distortion balance
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BAR90-02LRH
BAR90-098LRH
BAR90-02LS
Type
BAR90-02LRH
BAR90-02LS
BAR90-098LRH
1
Pb-containing package may be available upon special request
Maximum Ratings at T
= 25°C, unless otherwise specified
A
Parameter
Diode reverse voltage
Forward current
Total power dissipation
≤ 137 °C, BAR90-02LS
T
S
≤ 133°C, all others
T
S
Junction temperature
Operating temperature range
Storage temperature
1)
Package
Configuration
TSLP-2-7
single, leadless
TSSLP-2-1
single, leadless
TSLP-4-7
anti-parallel pair, leadless
Symbol
V
R
I
F
P
tot
T
j
T
op
T
stg
1
BAR90...
L
Marking
(nH)
S
0.4
R9
0.2
J
0.4
T9
Value
Unit
80
V
100
mA
mW
150
250
150
°C
-55 ... 125
-55 ... 150
2010-03-05

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BAR 90-02LS E6327 Summary of contents

  • Page 1

    Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz (typ. 0.19 pF) • Low forward resistance (typ. 1.3 Ω ...

  • Page 2

    Thermal Resistance Parameter 1) Junction - soldering point BAR90-02LS all others Electrical Characteristics at T Parameter DC Characteristics Breakdown voltage µA (BR) Reverse current Forward voltage ...

  • Page 3

    Electrical Characteristics at T Parameter AC Characteristics Diode capacitance MHz 100 MHz GHz ...

  • Page 4

    Diode capacitance Parameter 0.5 pF 0.4 0.35 1 MHz 0.3 100 MHz 1 GHz 1.8 GHz 0.25 0.2 0.15 0 ƒ (I Forward resistance r f ...

  • Page 5

    Forward current BAR90-02LRH / -098LRH 120 mA 100 Permissible Puls Load R thJS BAR90-02LRH / -098LRH 2 10 ...

  • Page 6

    Permissible Puls Load R thJS BAR90-02LS 0,5 0,2 0,1 0,05 0 0,02 10 0,01 0,005 Insertion loss I = -|S | ...

  • Page 7

    Package Outline Top view 2 1 Cathode marking 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" Copper Marking Layout (Example) Standard Packing Reel ø180 mm = 15.000 Pieces/Reel Reel ø330 ...

  • Page 8

    Package Outline Top view Pin 1 marking 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.3 Marking Layout (Example) Standard Packing Reel ø180 mm = 15.000 ...

  • Page 9

    Package TSSLP-2-1 9 BAR90... 2010-03-05 ...

  • Page 10

    ... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...

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