- Components/
- Discrete Semiconductor Products/
- RF Diodes/
BAR 81W H6327
BAR 81W H6327 | |
|---|---|
| Manufacturer Part Number | BAR 81W H6327 |
| Description | DIODE RF SW 30V 100MA SOT343 |
| Manufacturer | Infineon Technologies |
| BAR 81W H6327 datasheets |
|
Availability: By request
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
Shipping terms
- Standard delivery time differs from 5-8 business days if the supplier is a local one to 12-14 days if the suplier is from overseas. If delivery time differs it's always mentioned in our quotation.
- We ship worldwide using main international couriers like FedEx, DHL, UPS, TNT, EMS. We can also use client's freight account. Other shipping methods can be discussed. We do best to meet your needs!
Payment terms
- For new client payment term is payment in advance. At this moment we accept 3 payment methods: wire transfer, PayPal and Western Union. Credit card payment is under constrution and will be introduced soon. Escrow service is acceptable. Net terms for regular customers is not a problem. Working with us is totally safe for you.
- If you still have any questions - please contact us
Specifications of BAR 81W H6327 | |||
|---|---|---|---|
| Diode Type | Standard - Single | Voltage - Peak Reverse (max) | 30V |
| Current - Max | 100mA | Capacitance @ Vr, F | 0.9pF @ 3V, 1MHz |
| Resistance @ If, F | 1 Ohm @ 5mA, 100MHz | Power Dissipation (max) | 100mW |
| Package / Case | SC-70-4, SC-82-4, SOT-323-4, SOT-343 | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Other names | BAR81WH6327XT | ||
1
2
3
4
5
6
PrevNext
Silicon RF Switching Diode
Designed for use in shunt configuration in
high performance RF switches
High shunt signal isolation
Low shunt insertion loss
Optimized for short - open transformation
using
lines
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BAR81W
Type
BAR81W
* series inductance chip to ground
Maximum Ratings at T
= 25°C, unless otherwise specified
A
Parameter
Diode reverse voltage
Forward current
Total power dissipation
T
138°C
s
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
2)
Junction - soldering point
1
Pb-containing package may be available upon special request
2
For calculation of R
please refer to Application Note Thermal Resistance
thJA
1)
Package
Configuration
SOT343
single shunt-diode
Symbol
V
R
I
F
P
tot
T
j
T
op
T
stg
Symbol
R
thJS
1
BAR81...
L
Marking
(nH)
S
0.15*
BBs
Value
Unit
30
V
100
mA
100
mW
150
°C
-55 ... 125
-55 ... 150
Value
Unit
K/W
120
2007-04-19
Related parts for BAR 81W H6327 | |||
|---|---|---|---|
| Part Number | Description | Manufacturer | Datasheet |
 BAR 81W E6327 |
DIODE RF SGL 30V 100MA SOT-343 | Infineon Technologies |
|
 8-142 |
BARRIER BLOCK 8POS .563" | Cinch Connectors |
|
 8-140 |
BARRIER BLOCK 8POS .375" | Cinch Connectors |
|
 8-141 |
BARRIER BLOCK 8POS .438" | Cinch Connectors |
|
 556882-8 |
Power to the Board RCPT ASY R/A WTB 8 POS | TE Connectivity |
|
 3-794638-8 |
Power to the Board HDR ASSY 8 POS 30 AU VERT SMT | TE Connectivity |
|
 1445053-8 |
Power to the Board HDR VERT 8 POS TIN SINGLE ROW | TE Connectivity |
|
 794620-8 |
Power to the Board HDR R/A 8 POS 30 AU DUAL | TE Connectivity |
|
 14004-8 |
BARRIER TERM BLOCK 8POS 12.70MM | Cooper/Bussmann |
|
 8-1437407-8 |
BARRIER STRIP RAISED VERT 8POS | Tyco Electronics |
|
 BAR89-02L |
BAR89-02LSilicon PIN Diode | Infineon Technologies AG |
|
|
BAR15-1E6327 |
SOT23/RF PIN DIODE | Infineon Technologies AG |
|
|
BAR63-02WH6327TR |
Infineon Technologies AG | ||
|
BAR64-02VH6327TR |
SC79-2/Silicon PIN Diode | Infineon Technologies AG | |
|
BAR64-05WE6327 |
SOT323/RF PIN DIODE | Infineon Technologies AG |
|
BAR 81W H6327 Summary of contents |
|---|
|
