2N3819 Fairchild Semiconductor, 2N3819 Datasheet
2N3819
Manufacturer Part Number
2N3819
Description
TRANSISTOR RF NCH 25V TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N3819.pdf
(3 pages)
Specifications of 2N3819
Transistor Type
N-Channel JFET
Voltage - Rated
25V
Current Rating
50mA
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
N-Channel
Power Dissipation
350 mW
Drain Source Voltage Vds
25 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
100 mA
Drain Current (idss At Vgs=0)
50 mA
Forward Transconductance Gfs (max / Min)
0.002 S to 0.0065 S
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
25 V
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Frequency
-
Gain
-
Noise Figure
-
Current - Test
-
Voltage - Test
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N3819
Manufacturer:
FAIRCHILD
Quantity:
38 000
Part Number:
2N3819
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2002 Fairchild Semiconductor Corporation
N-Channel RF Amplifier
• This device is designed for RF amplifier and mixer applications
• Sourced from process 50.
Epitaxial Silicon Transistor
Absolute Maximum Ratings*
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Thermal Characteristics
* Device mounted on FR-4 PCB 1.5”
V
V
I
I
T
Off Characteristics
V
I
V
V
On Characteristics
I
Small Signal Characteristics
gfs
goss
y
C
C
P
R
R
D
GF
GSS
DSS
operating up to 450MHz, and for analog switching requiring low
capacitance.
Symbol
fs
STG
DG
GS
(BR)GSS
GS
GS
D
iss
rss
Symbol
JC
JA
Symbol
(off)
Forward Transfer Admittance
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Gate-Source Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Conductance
Output Conductance
Input Capacitance
Reverse Transfer Capacitance
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Drain-Gate Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Storage Temperature Range
Parameter
1.6”
0.06”
Parameter
T
A
T
=25 C unless otherwise noted
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
I
V
V
V
V
V
V
V
V
G
V
2N3819
GS
DS
DS
DS
DS
DS
DS
DS
DS
= 1.0 A, V
= 15V, V
= 15V, I
= 15V, I
= -15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
Test Condition
D
D
GS
DS
GS
GS
GS
GS
GS
DS
= 2.0nA
= 200 A
= 0, f = 1.0KHz
= 0
= 0
= 0, f = 1.0KHz
= 0, f = 1.0KHz
= 0, f = 1.0KHz
= 0, f = 1.0KHz
= 0
Max.
350
125
357
2.8
1. Drain 2. Gate 3. Source
2000
Min.
-0.5
1600
2.0
1
25
-55 ~ 150
Ratings
-25
25
50
10
Typ.
TO-92
Max.
6500
-7.5
2.0
8.0
8.0
4.0
20
50
mW/ C
Units
mW
Rev. A1, December 2002
C/W
C/W
Units
mA
mA
V
V
C
Units
mhos
mhos
mA
nA
mhos
pF
pF
V
V
V
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2N3819 Summary of contents
Page 1
... Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA * Device mounted on FR-4 PCB 1.5” 1.6” 0.06” ©2002 Fairchild Semiconductor Corporation 2N3819 T =25 C unless otherwise noted C Parameter T =25 C unless otherwise noted C Test Condition ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A1, December 2002 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...