MPF102 Fairchild Semiconductor, MPF102 Datasheet
MPF102
Manufacturer Part Number
MPF102
Description
JFET AMP N-CH RF SS TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.MPF102.pdf
(3 pages)
Specifications of MPF102
Transistor Type
N-Channel JFET
Voltage - Rated
25V
Current Rating
20mA
Package / Case
TO-92-3 (Standard Body), TO-226
Transistor Polarity
N-Channel
Forward Transconductance Gfs (max / Min)
0.002 S to 0.0075 S
Gate-source Cutoff Voltage
- 8 V
Gate-source Breakdown Voltage
- 25 V
Maximum Drain Gate Voltage
25 V
Drain Current (idss At Vgs=0)
8 mA to 80 mA
Power Dissipation
350 mW
Maximum Operating Temperature
+ 155 C
Configuration
Single
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Frequency
-
Gain
-
Noise Figure
-
Current - Test
-
Voltage - Test
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
ECG132
F10015M
F10015M
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MPF102
Manufacturer:
PROCONN
Quantity:
30 000
Company:
Part Number:
MPF102RLRM
Manufacturer:
MOT
Quantity:
1 200
©2004 Fairchild Semiconductor Corporation
N-Channel RF Amplifier
• This device is designed for electronic switching applications such as
• Sourced from process 50.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
Thermal Characteristics
V
V
I
T
Off Characteristics
V
I
V
V
On Characteristics *
I
g
Small Signal Characteristics
C
C
P
R
R
GF
GSS
DSS
low ON resistance analog switching.
fs
J
DG
GS
(BR)GSS
gs(off)
gs
D
iss
rss
Symbol
Symbol
, T
JC
JA
Symbol
STG
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Gate-Source Voltage
Zero-Gate Voltage Drain Current
Forward Transconductance
Common-Source Input Capacitance
Common-Source Reverse Transfer
Capacitance
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
T
a
T
=25 C unless otherwise noted
a
=25 C unless otherwise noted
Parameter
T
Parameter
a
=25 C unless otherwise noted
MPF102
I
V
V
V
V
V
V
V
G
GS
DS
DS
DS
GS
GS
GS
= -1.0 A, V
= -15V, V
= 15V, I
= 15V, I
= 15V, V
= 0V, V
= 0, V
= 0, V
Test Condition
DS
DS
DS
D
D
GS
= 15V, f = 1MHz
= 15V, f = 1MHz
DS
DS
= 2nA
= 200 A
= 15V, f = 1kHz
= 0
= 0
= 0
1. Drain 2. Source 3. Gate
1
- 55 ~ +155
Value
-25
25
10
2000
Min.
-0.5
-25
2.0
Max.
350
125
357
2.8
TO-92
7500
Max.
-2.0
-8.0
-7.5
7.0
3.0
20
Rev. B, October 2004
mW/ C
Units
mW
C/W
C/W
Units
mA
V
V
Units
C
mA
nA
pF
pF
V
V
V
S
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MPF102 Summary of contents
Page 1
... C Common-Source Reverse Transfer rss Capacitance Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2004 Fairchild Semiconductor Corporation MPF102 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition -15V ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2004 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B, October 2004 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A CEx™ FAST FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ ...