BF994S,215 NXP Semiconductors, BF994S,215 Datasheet

MOSFET NCH DUAL GATE 20V SOT143B

BF994S,215

Manufacturer Part Number
BF994S,215
Description
MOSFET NCH DUAL GATE 20V SOT143B
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF994S,215

Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
N-Channel Dual Gate
Frequency
200MHz
Gain
25dB
Voltage - Rated
20V
Current Rating
30mA
Noise Figure
1dB
Current - Test
10mA
Voltage - Test
15V
Configuration
Single Dual Gate
Continuous Drain Current
0.03 A
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
200 mW
Transistor Polarity
N-Channel
Application
VHF
Channel Type
N
Channel Mode
Depletion
Drain Source Voltage (max)
20V
Power Gain (typ)@vds
25@15VdB
Noise Figure (max)
1(Typ)dB
Package Type
SOT
Pin Count
3 +Tab
Input Capacitance (typ)@vds
2.5@15V@Gate 1/1.2@15V@Gate 2pF
Output Capacitance (typ)@vds
1@15VpF
Reverse Capacitance (typ)
0.025@15VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1972-2
933754970215
BF994S T/R
DISCRETE SEMICONDUCTORS
DATA SHEET
BF994S
N-channel dual-gate MOS-FET
Product specification
July 1993

Related parts for BF994S,215

BF994S,215 Summary of contents

Page 1

DATA SHEET BF994S N-channel dual-gate MOS-FET Product specification DISCRETE SEMICONDUCTORS July 1993 ...

Page 2

... NXP Semiconductors N-channel dual-gate MOS-FET FEATURES  Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS  VHF applications such as: – VHF television tuners – Professional communication equipment. PINNING PIN SYMBOL source 2 d drain 3 g gate 2 ...

Page 3

... NXP Semiconductors N-channel dual-gate MOS-FET LIMITING VALUES In according with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage DS I drain current (DC average drain current D(AV) I gate 1-source current G1-S I gate 2-source current G2-S P total power dissipation tot T storage temperature range ...

Page 4

... NXP Semiconductors N-channel dual-gate MOS-FET STATIC CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER I gate 1 cut-off currents G1-SS I gate 2 cut-off currents G2-SS V gate 1-source breakdown voltage I (BR)G1-SS V gate 2-source breakdown voltage I (BR)G2-SS I drain-source cut-off voltage DSS V gate 1-source cut-off voltage (P)G1-S V gate 2-source cut-off voltage ...

Page 5

... NXP Semiconductors N-channel dual-gate MOS-FET PACKAGE OUTLINE Plastic surface-mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143B July 1993 scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES ...

Page 6

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 7

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 8

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

Related keywords