ATF-55143-TR1G Avago Technologies US Inc., ATF-55143-TR1G Datasheet

IC TRANS E-PHEMT 2GHZ SOT-343

ATF-55143-TR1G

Manufacturer Part Number
ATF-55143-TR1G
Description
IC TRANS E-PHEMT 2GHZ SOT-343
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of ATF-55143-TR1G

Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Transistor Type
pHEMT FET
Frequency
2GHz
Gain
17.7dB
Voltage - Rated
5V
Current Rating
100mA
Noise Figure
0.6dB
Current - Test
10mA
Voltage - Test
2.7V
Power - Output
14.4dBm
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Power Dissipation
270 mW
Drain Source Voltage Vds
5 V
Gate-source Breakdown Voltage
- 5 V to 1 V
Continuous Drain Current
100 mA
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
- 5 V to 1 V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
100mA
Power Dissipation Pd
270mW
Noise Figure Typ
0.6dB
No. Of Pins
4
Dc Current Gain Min (hfe)
17.7
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
516-1573-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATF-55143-TR1G
Manufacturer:
AVAGO
Quantity:
19 400
Part Number:
ATF-55143-TR1G
Manufacturer:
AVAGO
Quantity:
60 000
Part Number:
ATF-55143-TR1G
Manufacturer:
AGILENT
Quantity:
179
Part Number:
ATF-55143-TR1G
Manufacturer:
AVGO
Quantity:
20 000
Company:
Part Number:
ATF-55143-TR1G
Quantity:
30 000
ATF-55143
Low Noise Enhancement Mode Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Description
Avago Technologies’ ATF‑55143 is a high dynamic range,
very low noise, single supply E‑PHEMT housed in a
4‑lead SC‑70 (SOT‑343) surface mount plastic package.
The combination of high gain, high linearity and low
noise makes the ATF‑55143 ideal for cellular/PCS hand‑
sets, wireless data systems (WLL/RLL, WLAN and MMDS)
and other systems in the 450 MHz to 6 GHz frequency
range.
Surface Mount Package SOT-343
Pin Connections and Package Marking
Note:
Top View. Package marking provides orientation and identification
“5F” = Device Code
“x” = Date code character identifies month of manufacture.
SOURCE
DRAIN
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
SOURCE
GATE
Features
• High linearity performance
• Single Supply Enhancement Mode Technology
• Very low noise figure
• Excellent uniformity in product specifications
• 400 micron gate width
• Low cost surface mount small plastic package SOT‑
• Tape‑and‑Reel packaging option available
• Lead Free Option Available
Specifications
• 2 GHz; 2.7V, 10 mA (Typ.)
• 24.2 dBm output 3
• 14.4 dBm output power at 1 dB gain compression
• 0.6 dB noise figure
• 17.7 dB associated gain
• Lead‑free option available
Applications
• Low noise amplifier for cellular/PCS handsets
• LNA for WLAN, WLL/RLL and MMDS applications
• General purpose discrete E‑PHEMT for other ultra low
Note:
1. Enhancement mode technology requires positive Vgs, thereby
343 (4 lead SC‑70)
noise applications
eliminating the need for the negative gate voltage associated with
conventional depletion mode devices.
rd
order intercept
[1]

Related parts for ATF-55143-TR1G

ATF-55143-TR1G Summary of contents

Page 1

... SC‑70 (SOT‑343) surface mount plastic package. The combination of high gain, high linearity and low noise makes the ATF‑55143 ideal for cellular/PCS hand‑ sets, wireless data systems (WLL/RLL, WLAN and MMDS) and other systems in the 450 MHz to 6 GHz frequency range ...

Page 2

... ATF-55143 Absolute Maximum Ratings Symbol Parameter V Drain‑Source Voltage DS V Gate‑Source Voltage GS V Gate Drain Voltage GD I Drain Current DS I Gate Current GS P Total Power Dissipation diss P RF Input Power in max. (Vds=2.7V, Ids=10mA) (Vds=0V, Ids=0mA) (Vds=0V, Ids=0mA) T Channel Temperature CH T Storage Temperature STG θ ...

Page 3

... ATF-55143 Electrical Specifications T = 25°C, RF parameters measured in a test circuit for a typical device A Symbol Parameter and Test Condition Vgs Operational Gate Voltage Vth Threshold Voltage Idss Saturated Drain Current Gm Transconductance Igss Gate Leakage Current NF Noise Figure [ 900 MHz Ga Associated Gain [ 900 MHz ...

Page 4

... ATF-55143 Typical Performance Curves 2V 2.7V FREQUENCY (GHz) [1] Figure 6. Gain vs. Bias over Frequency 2V 2.7V FREQUENCY (GHz) [1] Figure 9. IIP3 vs. Bias over Frequency. 0.60 0.55 0.50 0.45 0.40 0.35 0.30 2V 2.7V 0. (mA) ds Figure 12. Fmin vs. I and GHz Notes: 1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure at 2 bias. This circuit represents a trade‑ ...

Page 5

... ATF-55143 Typical Performance Curves, continued 2. (mA) dq [1,2] Figure 15. P1dB vs. I and GHz 2. (mA) ds Figure 18. OIP3 vs. I and V at 900 MHz Notes: 1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure at 2 bias. This circuit represents a trade‑ ...

Page 6

... ATF-55143 Typical Performance Curves, continued 28 25°C -40°C 85° FREQUENCY (GHz) Figure 21. Gain vs. Temperature and [1] Frequency with bias at 2.7V 25°C 0 -40°C -2 85° FREQUENCY (GHz) Figure 24. IIP3 vs. Temperature and [1] Frequency with bias at 2.7V, 10 mA. Notes: 1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure at 2 bias. This circuit represents a trade‑ ...

Page 7

... ATF-55143 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.998 ‑6.5 20.78 0.5 0.963 ‑31.7 20.37 0.9 0.894 ‑54.7 19.57 1.0 0.879 ‑60.1 19.32 1.5 0.793 ‑84.1 18.07 1.9 0.731 ‑100.8 17.11 2.0 0.718 ‑104.7 16.86 2.5 0.657 ‑123.7 15.79 3.0 0.611 ‑ ...

Page 8

... ATF-55143 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.997 ‑7.1 22.33 0.5 0.953 ‑34.5 21.82 0.9 0.873 ‑58.8 20.86 1.0 0.856 ‑64.6 20.58 1.5 0.759 ‑89.3 19.14 1.9 0.695 ‑106.2 18.06 2.0 0.681 ‑110.2 17.8 2.5 0.621 ‑129.3 16.62 3.0 0.578 ‑ ...

Page 9

... ATF-55143 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.997 ‑7.5 23.23 0.5 0.947 ‑36.2 22.66 0.9 0.858 ‑61.3 21.59 1.0 0.839 ‑67.2 21.29 1.5 0.738 ‑92.4 19.74 1.9 0.673 ‑109.4 18.59 2.0 0.659 ‑113.5 18.32 2.5 0.599 ‑132.6 17.07 3.0 0.558 ‑ ...

Page 10

... ATF-55143 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.998 ‑6.4 20.86 0.5 0.963 ‑31.2 20.46 0.9 0.896 ‑53.8 19.68 1.0 0.881 ‑59.2 19.44 1.5 0.794 ‑83 18.21 1.9 0.732 ‑99.5 17.25 2.0 0.718 ‑103.4 17.01 2.5 0.655 ‑122.3 15.94 3.0 0.608 ‑ ...

Page 11

... ATF-55143 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.997 ‑7.4 23.29 0.5 0.947 ‑35.8 22.72 0.9 0.860 ‑60.8 21.67 1.0 0.840 ‑66.6 21.37 1.5 0.739 ‑91.7 19.83 1.9 0.672 ‑108.6 18.68 2.0 0.658 ‑112.7 18.41 2.5 0.597 ‑131.7 17.16 3.0 0.554 ‑ ...

Page 12

... ATF-55143 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.998 ‑7.4 23.34 0.5 0.947 ‑35.9 22.77 0.9 0.859 ‑60.9 21.71 1.0 0.839 ‑66.7 21.41 1.5 0.738 ‑91.8 19.86 1.9 0.671 ‑108.7 18.71 2.0 0.657 ‑112.7 18.44 2.5 0.595 ‑131.7 17.19 3.0 0.552 ‑ ...

Page 13

... ATF-55143 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.996 ‑7.9 24.3 0.5 0.937 ‑38.1 23.64 0.9 0.840 ‑64.1 22.44 1.0 0.819 ‑70.1 22.11 1.5 0.712 ‑95.7 20.43 1.9 0.646 ‑112.8 19.2 2.0 0.631 ‑116.8 18.91 2.5 0.571 ‑135.8 17.59 3.0 0.531 ‑ ...

Page 14

... Passive Biasing Passive biasing of the ATF‑55143 is accomplished by the use of a voltage divider consisting of R1 and R2. The voltage for the divider is derived from the drain voltage which provides a form of voltage feedback through the use help keep drain current constant. Resis‑ ...

Page 15

... Vdd Figure 34. Typical ATF-55143 LNA with Active Biasing. An active bias scheme is shown in Figure 34. R1 and R2 provide a constant voltage source at the base of a PNP transistor at Q2. The constant voltage at the base raised by 0.7 volts at the emitter. The constant emitter voltage plus the regulated V ...

Page 16

... Tau= Rgd=0.5 Ohm Tnom=16.85 Rd=2.025 Ohm Idstc= Rg=1.7 Ohm Ucrit=-0.72 Vgexp=1.91 Rs=0.675 Ohm Gamds=1e-4 Ld= Vtotc= Lg=0.094 nH Betatce= Ls= Rgs=0.5 Ohm Cds=0.100 pF Rc=390 Ohm ATF-55143 ADS Package Model INSIDE Package VAR Var Egn VAR1 K=5 Z2=85 Z1= GATE C=0.143 pF L Port TLINP TLINP L1 ...

Page 17

... D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil Figure 35. Adding Vias to the ATF-55143 Non-Linear Model for Comparison to Measured S and Noise Parameters. 17 For Further Information The information presented here is an introduction to the use of the ATF‑55143 enhancement mode PHEMT. More detailed application circuit information is available from Avago Technologies ...

Page 18

Noise Parameter Applications Information F values at 2 GHz and higher are based on measure‑ min ments while the F below 2 GHz have been extrapo‑ mins lated. The F values are based on a set of 16 noise min ...

Page 19

... Ordering Information Part Number No. of Devices ATF‑55143‑TR1G 3000 ATF‑55143‑TR2G 10000 ATF‑55143‑BLKG 100 Package Dimensions Outline 43 (SOT-343/SC70 lead) Note: 1. All dimensions are in mm. 2. Dimensions are inclusive of plating. 3. Dimensions are exclusive of mold flash and metal burr. 4. All specifications comply with EIAJ SC70. ...

Page 20

Recommended PCB Pad Layout for Avago's SC70 4L/SOT-343 Products (dimensions in inches/mm) Device Orientation REEL USER FEED DIRECTION COVER TAPE 20 CARRIER TAPE 8 mm TOP VIEW END VIEW 4 mm 5Fx 5Fx 5Fx 5Fx ...

Page 21

Tape Dimensions For Outline 4T Tape Dimensions and Product Orientation Description Cavity Length Width Depth Pitch Bottom Hole Diameter Perforlation Diameter Pitch Position Carrier Tape Width Thickness Cover Tape Width Thickness Distance Cavity to Perforation (Width Direction) Cavity to Perforation ...

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