TRANSISTOR RF DMOS SOT409A

BLF202,115

Manufacturer Part NumberBLF202,115
DescriptionTRANSISTOR RF DMOS SOT409A
ManufacturerNXP Semiconductors
BLF202,115 datasheet
 

Specifications of BLF202,115

Package / CaseSOT-409ATransistor Type2 N-Channel (Dual)
Frequency175MHzGain13dB
Voltage - Rated40VCurrent Rating1A
Current - Test20mAVoltage - Test12.5V
Power - Output2WMinimum Operating Temperature- 65 C
Mounting StyleSMD/SMTProduct TypeMOSFET Power
Resistance Drain-source Rds (on)4 OhmsTransistor PolarityN-Channel
ConfigurationSingle Dual Drain Dual Gate Quad SourceDrain-source Breakdown Voltage40 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current1 A
Power Dissipation5.7 WMaximum Operating Temperature+ 200 C
ApplicationHF/VHFChannel TypeN
Channel ModeEnhancementDrain Source Voltage (max)40V
Output Power (max)2WPower Gain (typ)@vds13@12.5VdB
Frequency (max)175MHzPackage TypeCDIP SMD
Pin Count8Forward Transconductance (typ)0.135S
Drain Source Resistance (max)4000@15VmohmInput Capacitance (typ)@vds5.3@12.5VpF
Output Capacitance (typ)@vds7.8@12.5VpFReverse Capacitance (typ)1.8@12.5VpF
Operating Temp Range-65C to 200CDrain Efficiency (typ)55%
MountingSurface MountMode Of OperationCW Class-B
Number Of Elements1Power Dissipation (max)5700mW
Vswr (max)50Screening LevelMilitary
Lead Free Status / RoHS StatusLead free / RoHS CompliantNoise Figure-
Other names568-2410-2
934055627115
BLF202 T/R
BLF202 T/R
  
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF202
HF/VHF power MOS transistor
Product specification
Supersedes data of 1999 Oct 20
M3D175
2003 Sep 19

BLF202,115 Summary of contents

  • Page 1

    DISCRETE SEMICONDUCTORS DATA SHEET BLF202 HF/VHF power MOS transistor Product specification Supersedes data of 1999 Oct 20 M3D175 2003 Sep 19 ...

  • Page 2

    Philips Semiconductors HF/VHF power MOS transistor FEATURES High power gain Easy power control Gold metallization Good thermal stability Withstands full load mismatch. APPLICATIONS Communications transmitters in the HF/VHF range with a nominal supply voltage of 12.5 V. DESCRIPTION Silicon N-channel ...

  • Page 3

    Philips Semiconductors HF/VHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER V drain-source voltage DS V gate-source voltage GS I drain current (DC total power dissipation tot T storage temperature ...

  • Page 4

    Philips Semiconductors HF/VHF power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GSth I drain-source leakage current DSS I gate-source leakage current GSS I on-state drain ...

  • Page 5

    Philips Semiconductors HF/VHF power MOS transistor 15 handbook, halfpage T.C. (mV/ Fig.3 Temperature coefficient of gate-source voltage as a function of drain current; typical values. 5 handbook, halfpage R ...

  • Page 6

    Philips Semiconductors HF/VHF power MOS transistor 5 handbook, halfpage C rs (pF MHz. GS Fig.7 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION ...

  • Page 7

    Philips Semiconductors HF/VHF power MOS transistor 20 handbook, halfpage G p (dB 1.5 2 2.5 Class-B operation 12 20mA 175 MHz Fig.8 ...

  • Page 8

    Philips Semiconductors HF/VHF power MOS transistor List of components (see Fig.10) COMPONENT C1, C11 film dielectric trimmer C2, C9 film dielectric trimmer C3, C5 multilayer ceramic chip capacitor; note 1 C4, C6 multilayer ceramic chip capacitor C7 Sprague electrolytic tantalum ...

  • Page 9

    Philips Semiconductors HF/VHF power MOS transistor 250 handbook, halfpage 125 125 0 50 100 Class B-operation 12 mA 237 ; P ...

  • Page 10

    Philips Semiconductors HF/VHF power MOS transistor MOUNTING RECOMMENDATIONS Both the metallized ground plate and the device leads contribute to the heat flow recommended that the transistor be mounted on a grounded metallized area of the printed-circuit board. This ...

  • Page 11

    Philips Semiconductors HF/VHF power MOS transistor BLF202 scattering parameters mA; note (MHz 1.00 2.00 10 1.00 4.00 20 1.00 7.90 30 0.99 11.90 ...

  • Page 12

    Philips Semiconductors HF/VHF power MOS transistor PACKAGE OUTLINE Ceramic surface mounted package; 8 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT 0.58 0.23 2.36 5.94 mm 0.43 ...

  • Page 13

    Philips Semiconductors HF/VHF power MOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating ...

  • Page 14

    Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...