BLF202,115 NXP Semiconductors, BLF202,115 Datasheet - Page 10

• Manufacturer Part Number: BLF202,115
• Description: TRANSISTOR RF DMOS SOT409A
• Manufacturer: NXP Semiconductors

Specifications of BLF202,115

• Package / Case: SOT-409A
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 175MHz
• Gain: 13dB
• Voltage - Rated: 40V
• Current Rating: 1A
• Current - Test: 20mA
• Voltage - Test: 12.5V
• Power - Output: 2W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 4 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Dual Drain Dual Gate Quad Source
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 5.7 W
• Maximum Operating Temperature: + 200 C
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 40V
• Output Power (max): 2W
• Power Gain (typ)@vds: 13@12.5VdB
• Frequency (max): 175MHz
• Package Type: CDIP SMD
• Pin Count: 8
• Forward Transconductance (typ): 0.135S
• Drain Source Resistance (max): 4000@15Vmohm
• Input Capacitance (typ)@vds: 5.3@12.5VpF
• Output Capacitance (typ)@vds: 7.8@12.5VpF
• Reverse Capacitance (typ): 1.8@12.5VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 5700mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2410-2; 934055627115; BLF202 T/R; BLF202 T/R

Philips Semiconductors
MOUNTING RECOMMENDATIONS
Both the metallized ground plate and the device leads contribute to the heat flow. It is recommended that the transistor
be mounted on a grounded metallized area of the printed-circuit board. This area should be of maximum 0.8 mm
thickness and include at least 12 x 0.5 diameter through metallized holes filled with solder.
A thermal resistance R
on the printed-circuit board.
2003 Sep 19
handbook, full pagewidth
HF/VHF power MOS transistor
Dimensions in mm.
th(mb-h)
of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted
7.38
3.60
Fig.15 Footprint SOT409A.
1.87 (2 )
10
4.60
1.00 (9 )
0.60 (4 )
MGK390
0.80 (2 )
1.00 (8 )
0.50 (12 )
Product specification
BLF202