BLF6G21-10G,112 NXP Semiconductors, BLF6G21-10G,112 Datasheet

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BLF6G21-10G,112

Manufacturer Part Number
BLF6G21-10G,112
Description
TRANSISTOR PWR LDMOS SOT538A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G21-10G,112

Transistor Type
LDMOS
Frequency
2.11GHz ~ 2.17GHz
Gain
18.5dB
Voltage - Rated
65V
Current Rating
3.1A
Current - Test
100mA
Voltage - Test
28V
Power - Output
700mW
Package / Case
SOT-538A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-5104-5
934063436112
BLF6G21-10G,112
1. Product profile
CAUTION
1.1 General description
1.2 Features
10 W LDMOS power transistor for base station applications at frequencies from
HF to 2200 MHz
Table 1.
I
[1]
I
I
I
I
I
I
Mode of operation
2-carrier W-CDMA
1-carrier W-CDMA
Dq
BLF6G21-10G
Power LDMOS transistor
Rev. 02 — 11 December 2009
= 100 mA; T
Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 28 V and an I
Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 28 V and an I
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
N
N
N
N
N
N
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Average output power = 0.7 W
Gain = 18.5 dB
Efficiency = 15 %
ACPR = 50 dBc
Average output power = 2 W
Gain = 19.3 dB
Efficiency = 31 %
ACPR = 39 dBc
Typical performance
case
= 25 C in a common source class-AB production test circuit.
f
(MHz)
2110 to 2170
2110 to 2170
Dq
Dq
V
(V)
28
28
DS
of 100 mA:
of 100 mA:
P
(W)
0.7
2
L(AV)
G
(dB)
18.5
19.3
p
Product data sheet
(%)
15
31
D
ACPR
(dBc)
50
39
[1]
[1]

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BLF6G21-10G,112 Summary of contents

Page 1

... BLF6G21-10G Power LDMOS transistor Rev. 02 — 11 December 2009 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 100 mA Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; ...

Page 2

... Ordering information Package Name Description - ceramic surface-mounted package; 2 leads Limiting values Parameter Conditions drain-source voltage gate-source voltage storage temperature junction temperature Rev. 02 — 11 December 2009 BLF6G21-10G Power LDMOS transistor Simplified outline Graphic symbol 1 [ Min Max - 65 0.5 +13 65 +150 ...

Page 3

... PDPCH 100 mA Symbol ACPR 7.1 Ruggedness in class-AB operation The BLF6G21-10G is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 2140 MHz at P BLF6G21-10G_2 Product data sheet Thermal characteristics thermal resistance from junction to case T Conditions ...

Page 4

... 100 mA input return loss as a function of load power; typical values 001aal121 D (%) ( 2.11 GHz ( 2.14 GHz ( 2.17 GHz Fig 3. Rev. 02 — 11 December 2009 BLF6G21-10G Power LDMOS transistor 001aal120 (1) ( 100 mA drain efficiency as a function of load power; typical values © NXP B.V. 2009. All rights reserved. ...

Page 5

... 100 mA 1-carrier W-CDMA input return loss as a function of load power; typical values 001aal124 D (%) (1) (2) ( ( 2.11 GHz ( 2.14 GHz ( 2.17 GHz Fig 6. Rev. 02 — 11 December 2009 BLF6G21-10G Power LDMOS transistor 001aal123 (1) ( (1) 30 (2) ( 100 mA 1-carrier W-CDMA drain efficiency as a function of load power; typical values © ...

Page 6

... GHz ( 2.17 GHz Fig (dB 0 100 mA 2-carrier W-CDMA input return loss as a function of load power; typical values Rev. 02 — 11 December 2009 BLF6G21-10G Power LDMOS transistor (3) (2) ( 100 mA; carrier spacing 10 MHz 1-carrier W-CDMA adjacent channel power ratio as a function of load power; ...

Page 7

... Fig 11. 2-carrier W-CDMA drain efficiency as a 001aal131 40 ACPR (dBc (3) (2) ( 1.2 1.8 P ( 2.11 GHz ( 2.14 GHz ( 2.17 GHz Fig 13. 2-carrier W-CDMA adjacent channel power Rev. 02 — 11 December 2009 BLF6G21-10G Power LDMOS transistor (1) (2) ( 0.6 1 100 mA function of load power; typical values 0 0.6 1 100 mA ...

Page 8

... REFERENCES JEDEC JEITA Rev. 02 — 11 December 2009 BLF6G21-10G Power LDMOS transistor 2.03 0.10 0.58 0.25 0.97 0.25 1.27 0.00 0.43 ...

Page 9

... CW powersweeps. 5: added 1-carrier W-CDMA powersweeps. 6: added 2-carrier W-CDMA powersweeps. Objective data sheet Rev. 02 — 11 December 2009 BLF6G21-10G Power LDMOS transistor Change notice Supersedes - BLF6G21-10G_1 - - © NXP B.V. 2009. All rights reserved ...

Page 10

... Export might require a prior authorization from national authorities. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 11 December 2009 BLF6G21-10G Power LDMOS transistor © NXP B.V. 2009. All rights reserved ...

Page 11

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 11 December 2009 Document identifier: BLF6G21-10G_2 ...

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