BLF1043,112 NXP Semiconductors, BLF1043,112 Datasheet

TRANSISTOR RF LDMOS SOT538A

BLF1043,112

Manufacturer Part Number
BLF1043,112
Description
TRANSISTOR RF LDMOS SOT538A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF1043112.pdf (12 pages)

Specifications of BLF1043,112

Package / Case
SOT-538A
Transistor Type
LDMOS
Frequency
960MHz
Gain
16.5dB
Voltage - Rated
65V
Current Rating
2.2A
Current - Test
85mA
Voltage - Test
26V
Power - Output
10W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
RF MOSFET Power
Resistance Drain-source Rds (on)
1.05 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
2.2 A
Maximum Operating Temperature
+ 200 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2409
934055708112
BLF1043
BLF1043
Product specification
Supersedes data of 2002 November 11
DATA SHEET
BLF1043
UHF power LDMOS transistor
DISCRETE SEMICONDUCTORS
M3D438
2003 Mar 13

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BLF1043,112 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET BLF1043 UHF power LDMOS transistor Product specification Supersedes data of 2002 November 11 M3D438 2003 Mar 13 ...

Page 2

Philips Semiconductors UHF power LDMOS transistor FEATURES Typical 2-tone performance at a supply voltage and – Output power = 10 W (PEP) – Gain = 18.5 dB – Efficiency = 40% – ...

Page 3

Philips Semiconductors UHF power LDMOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V drain-source voltage DS V gate-source voltage GS I drain current (DC storage temperature stg T junction temperature ...

Page 4

Philips Semiconductors UHF power LDMOS transistor 20 handbook, halfpage (dB Two-tone performance mA 960 ...

Page 5

Philips Semiconductors UHF power LDMOS transistor 12 handbook, halfpage 800 840 880 920 mA Impedance measured ...

Page 6

Philips Semiconductors UHF power LDMOS transistor handbook, full pagewidth input 2003 Mar Fig.9 Class-AB test circuit for 960 MHz. 6 Product specification V DS ...

Page 7

Philips Semiconductors UHF power LDMOS transistor List of components (see Figs 9 and 10) COMPONENT DESCRIPTION C1, C5 Tekelec variable capacitor C2, C3, C6, C7 multilayer ceramic chip capacitor; note C4, C10 tantalum SMD capacitor C8 multilayer ...

Page 8

Philips Semiconductors UHF power LDMOS transistor handbook, full pagewidth Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric ( The other side is unetched and serves as a ground plane. Fig.10 ...

Page 9

Philips Semiconductors UHF power LDMOS transistor PACKAGE OUTLINE Ceramic surface mounted package; 2 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT 1.35 ...

Page 10

Philips Semiconductors UHF power LDMOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating ...

Page 11

Philips Semiconductors UHF power LDMOS transistor 2003 Mar 13 NOTES 11 Product specification BLF1043 ...

Page 12

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

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