BLF245,112 NXP Semiconductors, BLF245,112 Datasheet

TRANSISTOR RF DMOS SOT123A

BLF245,112

Manufacturer Part Number
BLF245,112
Description
TRANSISTOR RF DMOS SOT123A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF245,112

Package / Case
SOT-123A
Transistor Type
N-Channel
Frequency
175MHz
Gain
15.5dB
Voltage - Rated
65V
Current Rating
6A
Noise Figure
2dB
Current - Test
50mA
Voltage - Test
28V
Power - Output
30W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
0.75 Ohm @ 10 V
Transistor Polarity
N-Channel
Configuration
Single Dual Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6 A
Power Dissipation
68000 mW
Maximum Operating Temperature
+ 200 C
Application
VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
30W
Power Gain (typ)@vds
15.5@28V/12@12.5VdB
Noise Figure (max)
2(Typ)dB
Frequency (max)
175MHz
Package Type
SOT-123A
Pin Count
4
Forward Transconductance (typ)
1.9S
Drain Source Resistance (max)
750@10Vmohm
Input Capacitance (typ)@vds
125@28VpF
Output Capacitance (typ)@vds
75@28VpF
Reverse Capacitance (typ)
7@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
67%
Mounting
Screw
Mode Of Operation
CW Class-B
Number Of Elements
1
Power Dissipation (max)
68000mW
Vswr (max)
50
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2402
933817060112
BLF245
BLF245
Product specification
Supersedes data of 1997 Dec 17
DATA SHEET
BLF245
VHF power MOS transistor
M3D065
DISCRETE SEMICONDUCTORS
2003 Sep 02

Related parts for BLF245,112

BLF245,112 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF245 VHF power MOS transistor Product specification Supersedes data of 1997 Dec 17 2003 Sep 02 ...

Page 2

Philips Semiconductors VHF power MOS transistor FEATURES High power gain Low noise figure Easy power control Good thermal stability Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF ...

Page 3

Philips Semiconductors VHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER V drain-source voltage DS V gate-source voltage GS I drain current (DC total power dissipation tot T storage temperature ...

Page 4

Philips Semiconductors VHF power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V drain-source breakdown voltage (BR)DSS I drain-source leakage current DSS I gate-source leakage current GSS V gate-source threshold voltage GSth V gate-source voltage ...

Page 5

Philips Semiconductors VHF power MOS transistor 6 handbook, halfpage T.C. (mV/ valid for 125 Fig.4 Temperature coefficient of gate-source voltage ...

Page 6

Philips Semiconductors VHF power MOS transistor 20 handbook, halfpage C rs (pF MHz. GS Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION INFORMATION FOR CLASS-B OPERATION ...

Page 7

Philips Semiconductors VHF power MOS transistor 20 handbook, halfpage (dB Class-B operation mA 175 MHz ...

Page 8

Philips Semiconductors VHF power MOS transistor handbook, full pagewidth C1 50 input 175 MHz. 2003 Sep D.U. Fig.13 Test circuit for class-B operation. 8 Product ...

Page 9

Philips Semiconductors VHF power MOS transistor List of components class-B test circuit (see Fig.14) COMPONENT DESCRIPTION C1 film dielectric trimmer C2, C8 film dielectric trimmer C3 multilayer ceramic chip capacitor C4, C6 multilayer ceramic chip capacitor C5 ceramic capacitor C7 ...

Page 10

Philips Semiconductors VHF power MOS transistor handbook, full pagewidth C1 Dimensions in mm. The circuit and components are situated on one side of the epoxy fibre-glass board; the other side is unetched copper and serves as an earth. Earth connections ...

Page 11

Philips Semiconductors VHF power MOS transistor 40 handbook, halfpage Class-B operation mA ...

Page 12

Philips Semiconductors VHF power MOS transistor BLF245 scattering parameters mA; note (MHz 0.91 48.3 10 0.80 81.4 20 0.71 116.7 30 0.68 132.3 ...

Page 13

Philips Semiconductors VHF power MOS transistor BLF245 scattering parameters mA; note (MHz 0.95 40.5 10 0.86 71.3 20 0.77 108.6 30 0.73 126.8 ...

Page 14

Philips Semiconductors VHF power MOS transistor PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 5.82 7.47 0.18 9.73 mm ...

Page 15

Philips Semiconductors VHF power MOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating ...

Page 16

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

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