BLF244,112 NXP Semiconductors, BLF244,112 Datasheet

TRANSISTOR RF DMOS SOT123A

BLF244,112

Manufacturer Part Number
BLF244,112
Description
TRANSISTOR RF DMOS SOT123A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF244112.pdf (16 pages)

Specifications of BLF244,112

Package / Case
SOT-123A
Transistor Type
N-Channel
Frequency
175MHz
Gain
17dB
Voltage - Rated
65V
Current Rating
3A
Current - Test
25mA
Voltage - Test
28V
Power - Output
15W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
1.5 Ohm @ 10 V
Transistor Polarity
N-Channel
Configuration
Single Dual Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3 A
Power Dissipation
38000 mW
Maximum Operating Temperature
+ 200 C
Application
VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
15W
Power Gain (typ)@vds
17@28V/15@12.5VdB
Frequency (max)
175MHz
Package Type
SOT-123A
Pin Count
4
Forward Transconductance (typ)
0.6(Min)S
Drain Source Resistance (max)
1500@10Vmohm
Input Capacitance (typ)@vds
60@28VpF
Output Capacitance (typ)@vds
40@28VpF
Reverse Capacitance (typ)
4.5@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
65%
Mounting
Screw
Mode Of Operation
CW Class-B
Number Of Elements
1
Power Dissipation (max)
38000mW
Vswr (max)
50
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-2411
933817040112
BLF244
BLF244
Product specification
Supersedes data of 1997 Dec 17
DATA SHEET
BLF244
VHF power MOS transistor
M3D065
DISCRETE SEMICONDUCTORS
2003 Oct 13

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BLF244,112 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF244 VHF power MOS transistor Product specification Supersedes data of 1997 Dec 17 2003 Oct 13 ...

Page 2

Philips Semiconductors VHF power MOS transistor FEATURES High power gain Low noise figure Easy power control Good thermal stability Withstands full load mismatch Gold metallization ensures excellent reliability. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal ...

Page 3

Philips Semiconductors VHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V drain-source voltage DS V gate-source voltage GS I drain current (DC total power dissipation tot T storage ...

Page 4

Philips Semiconductors VHF power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V drain-source breakdown voltage (BR)DSS I drain-source leakage current DSS I gate-source leakage current GSS V gate-source threshold voltage GSth V gate-source voltage ...

Page 5

Philips Semiconductors VHF power MOS transistor 2 handbook, halfpage T.C. (mV/ valid for 125 Fig.4 Temperature coefficient of gate-source voltage as a ...

Page 6

Philips Semiconductors VHF power MOS transistor 20 handbook, halfpage C rs (pF MHz. GS Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION INFORMATION FOR CLASS-B OPERATION ...

Page 7

Philips Semiconductors VHF power MOS transistor 30 handbook, halfpage Class-B operation mA 175 MHz 0.3 K/W. ...

Page 8

Philips Semiconductors VHF power MOS transistor handbook, full pagewidth input 175 MHz. 2003 Oct D.U. Fig.13 Test circuit for class-B operation. ...

Page 9

Philips Semiconductors VHF power MOS transistor List of components (see Fig.13) COMPONENT C1, C12 multilayer ceramic chip capacitor; note 1 C2 multilayer ceramic chip capacitor; note 1 C3, C4, C9 film dielectric trimmer C5 multilayer ceramic chip capacitor; note 1 ...

Page 10

Philips Semiconductors VHF power MOS transistor handbook, full pagewidth strap Dimensions in mm. The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being unetched copper to serve as ...

Page 11

Philips Semiconductors VHF power MOS transistor 60 handbook, halfpage Class-B operation mA ...

Page 12

Philips Semiconductors VHF power MOS transistor BLF244 scattering parameters mA; note (MHz 0.98 18.6 10 0.93 35.0 20 0.84 63.4 30 0.77 83.3 ...

Page 13

Philips Semiconductors VHF power MOS transistor BLF244 scattering parameters mA; note (MHz 0.99 15.9 10 0.96 30.1 20 0.89 56.5 30 0.83 76.5 ...

Page 14

Philips Semiconductors VHF power MOS transistor PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 7.47 5.82 9.73 0.18 mm ...

Page 15

Philips Semiconductors VHF power MOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating ...

Page 16

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

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