BLF175,112 NXP Semiconductors, BLF175,112 Datasheet

TRANSISTOR RF DMOS SOT123A

BLF175,112

Manufacturer Part Number
BLF175,112
Description
TRANSISTOR RF DMOS SOT123A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF175,112

Package / Case
SOT-123A
Transistor Type
N-Channel
Frequency
108MHz
Gain
20dB
Voltage - Rated
125V
Current Rating
4A
Current - Test
30mA
Voltage - Test
50V
Power - Output
30W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
1.5 Ohm @ 10 V
Transistor Polarity
N-Channel
Configuration
Single Dual Source
Drain-source Breakdown Voltage
125 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4 A
Power Dissipation
68000 mW
Maximum Operating Temperature
+ 200 C
Application
HF/VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
125V
Output Power (max)
30W
Power Gain (typ)@vds
44@50V/24@50V/20@50VdB
Frequency (max)
108MHz
Package Type
SOT-123A
Pin Count
4
Forward Transconductance (typ)
1.6S
Drain Source Resistance (max)
1500@10Vmohm
Input Capacitance (typ)@vds
130@50VpF
Output Capacitance (typ)@vds
36@50VpF
Reverse Capacitance (typ)
3.7@50VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
65%
Mounting
Screw
Mode Of Operation
CW Class B/Class-A/Class-AB
Number Of Elements
1
Power Dissipation (max)
68000mW
Vswr (max)
50
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-2400
933939780112
BLF175
BLF175
Product specification
Supersedes data of 1997 Dec 15
DATA SHEET
BLF175
HF/VHF power MOS transistor
DISCRETE SEMICONDUCTORS
M3D065
2003 Jul 22

Related parts for BLF175,112

BLF175,112 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET BLF175 HF/VHF power MOS transistor Product specification Supersedes data of 1997 Dec 15 M3D065 2003 Jul 22 ...

Page 2

Philips Semiconductors HF/VHF power MOS transistor FEATURES High power gain Low intermodulation distortion Easy power control Good thermal stability Withstands full load mismatch Gold metallization ensures excellent reliability. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal ...

Page 3

Philips Semiconductors HF/VHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER V drain-source voltage DS V gate-source voltage drain current D P total power dissipation tot T storage temperature ...

Page 4

Philips Semiconductors HF/VHF power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V drain-source breakdown voltage (BR)DSS I drain-source leakage current DSS I gate-source leakage current GSS V gate-source threshold voltage GSth V gate-source voltage ...

Page 5

Philips Semiconductors HF/VHF power MOS transistor 0 handbook, halfpage T.C. (mV/ Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values. 1.5 ...

Page 6

Philips Semiconductors HF/VHF power MOS transistor 150 handbook, halfpage C rs (pF) 100 MHz. GS Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION INFORMATION ...

Page 7

Philips Semiconductors HF/VHF power MOS transistor 40 handbook, halfpage G p (dB Class-A operation 0 28.000 MHz; f ...

Page 8

Philips Semiconductors HF/VHF power MOS transistor handbook, full pagewidth 50 input MHz. 2003 Jul D.U. Fig.13 Test circuit for class-A operation. 8 Product specification C5 ...

Page 9

Philips Semiconductors HF/VHF power MOS transistor List of components (class-A test circuit) COMPONENT C1 multilayer ceramic chip capacitor (note 1) C2 multilayer ceramic chip capacitor C3, C4, C6 multilayer ceramic chip capacitor C5 multilayer ceramic chip capacitor C7 multilayer ceramic ...

Page 10

Philips Semiconductors HF/VHF power MOS transistor handbook, full pagewidth strap C1 Dimensions in mm. The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections ...

Page 11

Philips Semiconductors HF/VHF power MOS transistor APPLICATION INFORMATION FOR CLASS-AB OPERATION 0.3 K/W; unless otherwise specified mb-h RF performance in SSB operation in a common source circuit 28.000 MHz; f ...

Page 12

Philips Semiconductors HF/VHF power MOS transistor 0 handbook, halfpage d 3 (dB Class-AB operation 0. 28.000 MHz 28.001 ...

Page 13

Philips Semiconductors HF/VHF power MOS transistor List of components (class-AB test circuit) COMPONENT C1, C10 multilayer ceramic chip capacitor (note 1) C2, C4, C8, C11 film dielectric trimmer C3 multilayer ceramic chip capacitor (note 1) C5, C6, C9 multilayer ceramic ...

Page 14

Philips Semiconductors HF/VHF power MOS transistor handbook, full pagewidth mounting screw strap Dimensions in mm. The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to ...

Page 15

Philips Semiconductors HF/VHF power MOS transistor 30 handbook, halfpage Class-AB operation 0. ...

Page 16

Philips Semiconductors HF/VHF power MOS transistor APPLICATION INFORMATION FOR CLASS-B OPERATION RF performance in SSB operation in a common source circuit. MODE OF f OPERATION (MHz) CW, class-B 108 10 handbook, halfpage ...

Page 17

Philips Semiconductors HF/VHF power MOS transistor 30 handbook, halfpage G p (dB 100 Class-B operation mA Fig.26 ...

Page 18

Philips Semiconductors HF/VHF power MOS transistor BLF175 scattering parameters 100 mA; note (MHz 0.86 110.20 10 0.83 139.40 20 0.85 155.70 30 0.88 161.50 ...

Page 19

Philips Semiconductors HF/VHF power MOS transistor PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 7.47 5.82 9.73 0.18 mm ...

Page 20

Philips Semiconductors HF/VHF power MOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating ...

Page 21

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

Related keywords